AVS 45th International Symposium
    Plasma Science and Technology Division Tuesday Sessions
       Session PS+MS-TuA

Invited Paper PS+MS-TuA9
Advanced Deep-UV and 193 nm Optical Lithography: The Role of Resists, Reflectivity Control and Resolution Enhancement Technologies

Tuesday, November 3, 1998, 4:40 pm, Room 318/319/320

Session: ULSI Technology
Presenter: O. Nalamasu, Bell Laboratories, Lucent Technologies
Authors: O. Nalamasu, Bell Laboratories, Lucent Technologies
R.A. Cirelli, Bell Laboratories, Lucent Technologies
G.P. Watson, Bell Laboratories, Lucent Technologies
Correspondent: Click to Email
The fabrication of integrated circuits with optical lithography faces several challenges as the industry is moving from I-line to deep-UV and 193 nm lithographies. For the immediate future, the technical challenges in developing manufacturing processes with k values below 0.5 have been identified and are the subject of intense R&D activity across the world. The low k lithography solution requires fundamental understanding of, as well as innovations in optical and resist materials, reflectivity control and resolution enhancement (mask and optical) techniques. In this presentation, we will detail our research efforts in Resist materials, Reflectivity control and Resolution enhancement techology areas with special emphasis on 193 nm lithography and identify the issues and opportunities in extending the optical lithography for patterning sub-0.1 µm devices. We will also demonstrate 60 nm resolution with 193 nm lithography by combining research advances in single layer resist, dielectric anti-reflective layer/hard mask with a levenson phase-shifting mask.