In modern silicon technology, there is a steady trend to reduce the "thermal budget" of fabrication processes. The intent has been to reduce the thermal diffusion of dopants. However low temperatures have exposed significant non-equilibrium diffusion effects. The most striking of these, transient enhanced diffusion, causes many unexpected influences on devices. Transient diffusion (TED) is the enhanced diffusion rate of dopants due to point defects introduced during ion implantation. The enhancement can be as much as four decades above thermal diffusion rates. TED by its nature is cooperative in nature, where implanting one species can lead to enhanced diffusion of all the other species in the wafer, even those located some distance from the implantation window. The effects of such local and remote diffusion transients on transistors is manifold. In some cases, the transistors may fail completely to function as intended, in others, their properties may be degraded or shifted from their intended targets. This talk describes some of the experimentally observed impacts of transient diffusion in technology. It is shown how a better understanding of the materials science involved can lead to better devices.