AVS 45th International Symposium
    Nanometer-scale Science and Technology Division Wednesday Sessions
       Session NS+AS-WeM

Invited Paper NS+AS-WeM1
Recent Progress in the Functionalisation of AFM Probes using Electron-Beam Nanolithography

Wednesday, November 4, 1998, 8:20 am, Room 321/322/323

Session: Innovative Force, Near-Field Optics, and Tunneling Measurements
Presenter: J.M.R. Weaver, Glasgow University, Scotland
Authors: H. Zhou, Glasgow University, Scotland
G.M. Mills, Glasgow University, Scotland
B.K. Chong, Glasgow University, Scotland
L. Donaldson, Glasgow University, Scotland
J.M.R. Weaver, Glasgow University, Scotland
Correspondent: Click to Email
Scanned probe microscopy has greatly expanded the range of contrast mechanisms available to microscopists. Until recently, however, the only techniquees available to the non-specialist user have been those which involve either the modification of the SPM instrumentation (for example Scanning Capacitance Microscopy) or relatively simple functionalisation of the probe (for example Magnetic Force Microscopy). More complex techniques, based on the fabrication of advanced probes, have largely remained confined to a relatively small number of groups. These include the Hall Probe Microscope,@footnote 1@ The scanning Single Electron Transistor@footnote 2@ and others. Recently progress has been made towards methods whereby probes may be modified using batch fabrication techniques such as focussed ion beam deposition,@footnote 3@ controlled etching processes@footnote 4@ or direct-write electron-beam lithography.@footnote 5@ This talk describes recent work in which the last named method has been used to fabricate Near-Field Optical (SNOM), Thermal (SThM) and Magnetic sensors. Results will be presented from SNOM and SThM sensors and progress in sensor technology will also be discussed. @FootnoteText@ @footnote 1@A. Oral et. al. J. Vac. Sci. Technol. B14 (2) p.1202-5 (1996) @footnote 2@M.J. Yoo et. al. Science 276 (5312) p.579-82 (1997) @footnote 3@K. Luo et. al. Appl. Phys. Lett. 71 (12) p.1604-6 (1997) @footnote 4@E. Oesterschulze Appl. Phys. A66, S3-9 (1998) @footnote 5@H. Zhou et. al. J. Vac. Sci. Technol B16 (1) p.54-58 (1998)