AVS 45th International Symposium
    Electronic Materials and Processing Division Wednesday Sessions
       Session EM2-WeA

Invited Paper EM2-WeA7
UHV STM Nanofabrication and the Giant Deuterium Isotope Effect: Applications to CMOS Technology

Wednesday, November 4, 1998, 4:00 pm, Room 316

Session: Application of Scanning Probes to Electronic Materials
Presenter: J.W. Lyding, University of Illinois, Urbana-Champaign
Authors: J.W. Lyding, University of Illinois, Urbana-Champaign
M.C. Hersam, University of Illinois, Urbana-Champaign
G.C. Abeln, University of Illinois, Urbana-Champaign
E.T. Foley, University of Illinois, Urbana-Champaign
J. Lee, University of Illinois, Urbana-Champaign
Z. Chen, University of Illinois, Urbana-Champaign
D.S. Thompson, University of Illinois, Urbana-Champaign
J.S. Moore, University of Illinois, Urbana-Champaign
S.-T. Hwang, University of Illinois, Urbana-Champaign
H. Choi, University of Illinois, Urbana-Champaign
K. Hess, University of Illinois, Urbana-Champaign
Correspondent: Click to Email
The use of the UHV STM to selectively desorb hydrogen with atomic scale precision from Si(100)-2x1:H surfaces@footnote 1@ has opened new opportunities for creating nanoelectronic device structures. The chemical contrast between H-passivated and clean Si has enabled the development of nanoscale selective chemical schemes including oxidation,@footnote 1@ nitridation,@footnote 2@ and molecular functionalization.@footnote 3@ Using a high temperature STM these schemes are also being extended to include nanoscale metallization by UHV chemical vapor deposition. A key aspect of this work is the establishment of an electronic interface between nanoelectronic device structures and macroscopic contacts to enable testing. We will report on several schemes that are being developed for this purpose. In a parallel set of experiments it was found that the desorption of deuterium from Si(100)-2x1:D surfaces is much more difficult than hydrogen desorption.@footnote 4@ Using this as a basis, we discovered that deuterium treatment can dramatically prolong the lifetime of CMOS transistors by factors of 10 to 50.@footnote 5@ Recent low temperature STM desorption experiments@footnote 6@ have shed additional light on the CMOS degradation problem and the giant isotope effect. @FootnoteText@ @footnote 1@J.W. Lyding, T.-C. Shen, J.S. Hubacek, J.R. Tucker, and G.C. Abeln, Appl. Phys. Lett. 64, 2010 (1994). @footnote 2@J.W. Lyding, T.-C. Shen, G.C. Abeln, C. Wang, E.T. Foley, and J.R. Tucker, Mat. Res. Soc. Symp. Proc. 380, 187 (1995). @footnote 3@G. C. Abeln, S. Y. Lee, J. W. Lyding, D. S. Thompson, and J. S. Moore, Appl. Phys. Lett. 70, 2747 (1997). @footnote 4@Ph. Avouris, R.E. Walkup, A.R. Rossi, T.-C. Shen, G.C. Abeln, J.R. Tucker, and J.W. Lyding, Chem. Phys. Lett. 257, 148 (1996). @footnote 5@J.W. Lyding, K. Hess, and I.C. Kizilyalli, Appl. Phys. Lett. 68, 2526 (1996). @footnote 6@E. T. Foley, A. F. Kam, J. W. Lyding, and Ph. Avouris, Phys. Rev. Lett. 80, 1336 (1998).