AVS 45th International Symposium
    Electronic Materials and Processing Division Wednesday Sessions
       Session EM2-WeA

Paper EM2-WeA4
In-Situ STM of MBE Growth Quality for GaAs(001) and InP(001)*

Wednesday, November 4, 1998, 3:00 pm, Room 316

Session: Application of Scanning Probes to Electronic Materials
Presenter: G. Lengel, Laboratory for Physical Sciences
Authors: G. Lengel, Laboratory for Physical Sciences
F.G. Johnson, Laboratory for Physical Sciences
W.T. Beard, Laboratory for Physical Sciences
R.J. Phaneuf, Laboratory for Physical Sciences
E.D. Williams, University of Maryland
Correspondent: Click to Email
As heterostructure-based devices continue to shrink in size, the roughness of the interface between two materials plays a larger role in determining the performance of the final product. Characterization of the lateral length scales of the roughness as well as the root-mean-square roughness is important for understanding the impact of interface quality on device performance, To address this problem, In-Situ Scanning Tunneling Microscopy (STM) has been used to study the geometry of freshly prepared MBE samples. The evolution of roughness as a function of the initial condition of the surface before growth, the thickness of the buffer layer, as well as the role of the growth temperature on both GaAs and InP will be presented. The relative quality of these surfaces has been quantified by calculation of the height- height correlation function from the measured images. The physical significance of the measured parameters, and their usefulness as criteria for judging growth quality will be discussed. @FootnoteText@ *This work has been supported by the Laboratory for Physical Sciences.