| AVS 64th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS-WeA1 TSV Etch Plasma Modelling from Chamber to Feature Sebastian Mohr, Quantemol LTD, S. Rahimi, A. Dzarasova, Quantemol LTD, UK |
| 2:40pm | PS-WeA2 Global Model based Framework for Prediction of Ion Energy Distributions Under Pulsed RF-bias Conditions in Plasma Etching Processes Shogo Sakurai, ET Center, Samsung R&D Institute Japan, S. Lim, Samsung Electronics, Korea, R. Sakuma, S. Nakamura, H. Kubotera, K. Ishikawa, Samsung R&D Institute Japan, K. Lee, Samsung Electronics |
| 3:00pm | PS-WeA3 Invited Paper Understanding Particle-Surface Interactions and Their Importance in Plasma Processing: a Plasma Modelling Perspective Andrew Gibson, S. Schroeter, D. O'Connell, T. Gans, University of York, UK, M.J. Kushner, University of Michigan, J.-P. Booth, LPP-CNRS, Ecole Polytechnique, France |
| 4:20pm | PS-WeA7 Investigation of Pulsed Ar/O2/CF4 Capacitively Coupled Plasmas Wei Tian, S. Rauf, K.S. Collins, Applied Materials, Inc. |
| 4:40pm | PS-WeA8 Modeling of Silicon Etching using Bosch Process: Effects of Oxygen Addition on the Plasma and Surface Properties Guillaume Le Dain, STMicroelectronics / CNRS-IMN, France, A. Rhallabi, Cnrs - Imn, France, S. Elidrissi, University of Nantes, C. Cardinaud, A. Girard, Cnrs - Imn, France, F. Roqueta, M. Boufnichel, STMicroelectronics, France |
| 5:00pm | PS-WeA9 A Mixed Mode Parameter/Physical Driven Particle-in-cell (PIC) Code for Capturing Transient Response and Evolution Behavior of Laboratory Plasma Noel Lauer, N.J. Ianno, University of Nebraska-Lincoln |
| 5:20pm | PS-WeA10 Investigating Mode Transitions in Pulsed Inductively Coupled Plasmas Steven Lanham, M.J. Kushner, University of Michigan |
| 5:40pm | PS-WeA11 Invited Paper Science of Plasma-Surface Interaction for Modern Semiconductor Process Technologies Satoshi Hamaguchi, K. Karahashi, Osaka University, Japan |