AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Friday Sessions

Session 2D+MI+NS+SS+TF-FrM
Nanostructures including Heterostructures and Patterning of 2D Materials

Friday, November 3, 2017, 8:20 am, Room 15
Moderators: Huamin Li, University of Buffalo, SUNY, Arkady Krasheninnikov, Helmholtz Zentrum Dresden-Rossendorf, Germany


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Click a paper to see the details. Presenters are shown in bold type.

8:20am 2D+MI+NS+SS+TF-FrM1 Invited Paper
Electro-optics with 2D Semiconductors and Heterostructures
Goki Eda, National University of Singapore, Singapore
9:00am 2D+MI+NS+SS+TF-FrM3
Understanding Variations in Circularly Polarized Photoluminescence in Monolayer Transition Metal Dichalcogenides
Kathleen McCreary, M. Currie, A.T. Hanbicki, B.T. Jonker, Naval Research Laboratory
9:20am 2D+MI+NS+SS+TF-FrM4
Multi-Junction Lateral 2D Heterostructures of Transition Metal Dichalcogenides
Prasana Sahoo, University of South Florida, S. Memaran, Florida State University, Y. Xin, National High Magnetic Field Laboratory, L. Balicas, Florida State University, H.R. Gutierrez, University of South Florida
9:40am 2D+MI+NS+SS+TF-FrM5 Invited Paper
Novel Electronic, Optoelectronic, and Topological Properties of 2D Materials and Their Heterostructures
Xiaofeng Qian, Texas A&M University
10:20am 2D+MI+NS+SS+TF-FrM7
Imaging Nanoscale Heterogeneity at the Two-dimensional Semiconductor-Metal Heterointerface by Correlated Scanning Probe Microscopy
Deep Jariwala, California Institute of Technology, A. Krayev, E. Robinson, AIST-NT Inc., M.C. Sherrott, California Institute of Technology, M. Terrones, Pennsylvania State University, H.A. Atwater, California Institute of Technology
10:40am 2D+MI+NS+SS+TF-FrM8
Two-dimensional Circuitry Achieved by Defect Engineering of Transition Metal Dichalcogenides
Michael G. Stanford, P.R. Pudasaini, A.N. Hoffman, P.D. Rack, The University of Tennessee Knoxville
11:00am 2D+MI+NS+SS+TF-FrM9
Scanning Tunneling Microscopy and Spectroscopy Studies of Atomically Precise Graphene Nanoribbons on Semiconducting Surfaces
Ximeng Liu, A. Radocea, T. Sun, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, M. Pour, Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, N. Aluru, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, A. Sinitskii, Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, J.W. Lyding, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign
11:20am 2D+MI+NS+SS+TF-FrM10
Perfectly Perforated Monolayer WSe2
Kirby Smithe, C. Bailey, Stanford University, A. Krayev, AIST-NT Inc., E. Pop, Stanford University