| AVS 64th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Friday Sessions |
| Session 2D+MI+NS+SS+TF-FrM |
| Session: | Nanostructures including Heterostructures and Patterning of 2D Materials |
| Presenter: | Prasana Sahoo, University of South Florida |
| Authors: | P.K. Sahoo, University of South Florida S. Memaran, Florida State University Y. Xin, National High Magnetic Field Laboratory L. Balicas, Florida State University H.R. Gutierrez, University of South Florida |
| Correspondent: | Click to Email |
Here we demonstrate the successful synthesis of lateral in-plane multi-junction heterostructures based on transition metal dichalcogenides (TMD) 2D monolayers. The heterostructures were synthesized using a modified chemical vapor deposition approach. By only controlling the carrier gas composition, it is possible to selectively growth only one TMD at the time. This introduces an unprecedented flexibility in the CVD process and allows a good control of the lateral size of each TMD segment. Heterostructures only containing MoS2-WS2 or MoSe2-WSe2 multiple segments, were fabricated. We also demonstrate the synthesis of heterostructures based on homogeneous TMD ternary alloys (MoSxSey-WSxSey). Introducing ternary alloys in heterostructures opens the horizon of possible chemical combinations and applications of 2D optoelectronic devices. The band gap modulation as well as spatial chemical distribution were studied by Raman and photoluminescence mapping. The crystalline quality of the heterostructures were characterized within an aberration-corrected scanning transmission electron microscope. Basic devices were also fabricated to study the transport properties across the junctions. Depending of the growing conditions, diffuse and/or sharp seamless interfaces with high-crystalline quality can be produced.