| AVS 64th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Friday Sessions |
| Session 2D+MI+NS+SS+TF-FrM |
| Session: | Nanostructures including Heterostructures and Patterning of 2D Materials |
| Presenter: | Michael G. Stanford, The University of Tennessee Knoxville |
| Authors: | M.G. Stanford, The University of Tennessee Knoxville P.R. Pudasaini, The University of Tennessee Knoxville A.N. Hoffman, The University of Tennessee Knoxville P.D. Rack, The University of Tennessee Knoxville |
| Correspondent: | Click to Email |
Two-dimensional materials, such as transition metal dichalcogenides (TMDs), have demonstrated promising semiconducting properties. The electrical and optical properties of TMDs can be fined tuned by altering material thickness as well as chemical composition. Properties can also be tuned by defect engineering. In this work, a focused He+ beam as well as a remote plasma source were utilized to introduce defects into TMDs such as WSe2 and WS2 with fine control. Scanning transmission electron microscopy reveals that defects introduced into the TMDs range from chalcogen vacancies (0D defects) to 1D defects and extended defect networks. Tailoring defect concentration enables tunability of the electronic properties with insulating, semiconducting, and metallic behavior each obtainable. By tuning electronic properties, we demonstrate direct-write logic gates such as resistor loaded inverters with a voltage gain of greater than 5. We also demonstrate the fabrication of edge-contacted field effect transistors by defect engineering homojunctions between metallic and semiconducting WSe2 with on/off ratios greater than 106. Defect engineering of TMDs enables the direct-write of complex devices into single flakes toward the goal of atomically thin circuitry.