AVS 64th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThM

Paper TF-ThM3
Vapor Phase Infiltration: Unifying the Research Community Around Processing Science Fundamentals

Thursday, November 2, 2017, 8:40 am, Room 21

Session: Area-selective Deposition and Infiltration Growth Methods
Presenter: Mark Losego, Georgia Institute of Technology
Correspondent: Click to Email

Vapor phase infiltration (VPI) and its sister processing routes—sequential vapor infiltration (SVI), multiple pulse infiltration (MPI), and sequential infiltration synthesis (SIS)—are exciting, new chemical vapor processing technologies for synthesizing unique organic-inorganic hybrid materials. Because each of these processes were developed independently at various laboratories around the globe and designed to solve different technological problems, a common language has yet to emerge. This lack of a common lexicon introduces unnecessary complexity to the literature and slows the cohesive advancement of the science. This talk seeks to unify the research community around the fundamental science of these processes and demonstrate its uniqueness amongst other chemical vapor processing routes. While VPI/SVI/MPI/SIS emerged from the atomic layer deposition (ALD) research community, its kinetics is substantially different from ALD and truly unique amongst all chemical vapor processes. Unlike ALD and CVD, VPI/SVI/MPI/SIS is not a deposition process but rather an infiltration process composed of three distinct steps: (1) sorption (dissolution) of the gaseous precursor into an organic (polymeric) material, (2) diffusion of that precursor within this host material, (3) entrapment (reaction) of the precursor within the host material (Fig. 1). These unique processing kinetics are similar (identical?) for all of these infiltration processes and rich in fundamental science that intersects with a surprising number of disparate fields including gas membrane separations and solvent vapor annealing. For decades, understanding the fundamental kinetics of ALD and CVD has been the driver for advancing these technologies’ processing capabilities; it is now time to do the same for these chemical infiltration processes, such that rationale design physics can be established to devise processing schemes that precisely control the depth and quantity of inorganic infiltration. To guide this unification, this talk will introduce (1) a kinetics-based taxonomy scheme for classifying chemical vapor processes, (2) a basic framework for a common kinetics theory, and (3) a series of common, fundamental scientific questions that, if solved, could significantly advance the utility and expand the use of VPI processing technology.