AVS 64th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF+MI+NS-ThA

Paper TF+MI+NS-ThA10
Spatial Atomic Layer Deposition Reactor Design for Nano-laminates

Thursday, November 2, 2017, 5:20 pm, Room 21

Session: ALD and Nanostructures
Presenter: Yun Li, Huazhong University of Science and Technology, PR China
Authors: X.L. Wang, Huazhong University of Science and Technology, PR China
Y. Li, Huazhong University of Science and Technology, PR China
J.L. Lin, Huazhong University of Science and Technology, PR China
J.M. Cai, Huazhong University of Science and Technology, PR China
R. Chen, Huazhong University of Science and Technology, PR China
Correspondent: Click to Email
Atomic layer deposition (ALD) is commonly a vacuum based technique for ultrathin film fabrication with precise control of film thickness, uniformity and conformity. In contrast to conventional temporal ALD (T-ALD) that precursors and purging gases are introduced into reactor sequentially, the separation mode of spatially-separately ALD (S-ALD) between reactive precursors is in space instead of in time, thus the process is continuous. In S-ALD process, the inert gas serves as a flow gas barrier to separate the precursors’ zones, which prevents the cross contamination and atmosphere perturbation. With the alternating arrangements of oxidizer gas channels, metal source channels, and gas barriers of inert gas, the deposition rate of S-ALD could reach 1-3 order of magnitude higher than T-ALD. Moreover, the atmospheric pressure in S-ALD system enables this technique in a continuous form without vacuum. As the continuing development of S-ALD, it has found many potential high through-put and large scale applications. Here we present an S-ALD system design for fabricating binary oxides and their nano-laminates. The design of S-ALD reactor is based on motion structure of linear track and injector with a multiple slit gas source channel. By optimizing the structure of precursor channel based on the flow field simulation, a tree-branch-like gas feed structure is obtained, and the uniformity of the precursor distribution is enhanced significantly. The T-curve motion profile is replaced by the S-curve t o control the movement of substrate which can avoid abrupt change of acceleration and jerk in the acceleration and deceleration process, stabilizing the distance between injector and substrate precisely. The growth of thin film at different moving speeds has good linearity and uniformity. By integrating different reaction units, nano-laminates with tunable optical and electrical properties can be obtained.