AVS 64th International Symposium & Exhibition
    Plasma Science and Technology Division Tuesday Sessions
       Session PS-TuP

Paper PS-TuP13
Plasma Simulation of Capacitively Coupled Plasma for High Aspect Ration Contact Process of Semiconductor

Tuesday, October 31, 2017, 6:30 pm, Room Central Hall

Session: Plasma Science and Technology Poster Session
Presenter: Hyowon Bae, Samsung Electronics Co. Ltd.
Authors: H. Bae, Samsung Electronics Co. Ltd.
J. Kim, Pusan National University, Republic of Korea
M. Lin, Hanyang University, Republic of Korea
J. Um, Samsung Electronics Co. Ltd.
S. Han, Samsung Electronics Co. Ltd.
T. Kang, Samsung Electronics Co. Ltd.
H.J. Lee, Pusan National University, Republic of Korea
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High aspect ration contact process has been important process to make dynamic random access memory(DRAM) and NAND flash memory with large sotrage and high speed. Plasma etching technology has been studied for few decades, and plasma uniformity or chemistry can be controlled on these days under some condition. However, plasma etching process is still very tough to obtain the result which we wish with high frequency up to 100 MHz and high power over 10kW. Therefore, control of plasma under these condition is required to be sucesseful plasma etching result, which leads to obtain almost same etching result at all area of wafer from center to the edge. It also promises high yield and high profit in the industry. Capacitively coupled plasma(CCP) is most popular method in etching and deposition process. Plasma simulation is performed in this study to obtain the plasma distribution for unifrom etch rate at all area. Under the specific condition, uniform plasma can be shown. Ion enegry distribution, ion flux, and other physics will be explained in this presentation.