| AVS 64th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Monday Sessions |
| Session PS+AS+SE-MoM |
| Session: | Atmospheric Pressure Plasmas |
| Presenter: | Fred Roozeboom, TNO-Holst Centre & Eindhoven University of Technology, Netherlands |
| Authors: | A. Illiberi, TNO-Holst Centre, Netherlands I. Katsouras, TNO-Holst Centre, Netherlands S. Gazibegović, TNO-Holst Centre, Netherlands B. Cobb, TNO-Holst Centre, Netherlands E. Nekovic, TNO-Holst Centre, Netherlands W. van Boekel, TNO-Solliance, Netherlands C. Frijters, TNO-Solliance, Netherlands J. Maas, TNO-Holst Centre, Netherlands F. Roozeboom, TNO-Holst Centre & Eindhoven University of Technology, Netherlands Y.L.M. Creyghton, TNO-Solliance, Netherlands P. Poodt, TNO-Holst Centre, Netherlands G. Gelinck, TNO-Holst Centre & Eindhoven University of Technology, Netherlands |
| Correspondent: | Click to Email |
Less than a decade ago, InGaZnO has been reported as a new Amorphous Oxide Semiconductor (AOS) channel material replacing conventional amorphous silicon (a-Si:H) for application in thin-film transistor (TFT) circuits in display back panels [1]. Among these, indium zinc oxide (IZO) is emerging as the most promising AOS candidate for next-generation displays based on oxide TFTs because it combines a very high electron mobility with excellent optical transmission and thermal stability [2,3].
We have grown InZnO thin films by plasma-enhanced spatial atomic layer deposition (s-ALD) [4,5] and these layers have been manufactured into oxide TFT and ring oscillator devices which outperform the state-of-the-art. We will describe the growth of InZnO at atmospheric pressure and high deposition rates (~ nm/sec) starting with a short explanation of the basics and the advantages of this novel deposition technique including the use of a special atmospheric plasma source design of the so-called Surface Dielectric Barrier Discharge (SDBD) type [6]. Next, we will show that by varying the ratio of the trimethyl indium and diethyl zinc chemical precursor vapors, the In/(In+Zn) ratio of the film can be accurately tuned over the entire composition range from zinc oxide to indium oxide. TFT test devices with an In/Zn ratio of 2:1 show very high field-effect mobility exceeding 30 cm2/V.s (Fig. 1), excellent thermal (Fig. 2) and bias stress stability. We will further demonstrate the scalability of the IZO TFTs by fabricating 19-stage ring oscillators operating at 200 kHz which outperform the state-of-the-art.
This superior electrical performance, in combination with the intrinsic advantages of spatial ALD demonstrate the great potential of this atmospheric plasma concept for application in commercial manufacturing of low-cost and large-area AOS-based electronics.
1. T. Kamiya, K. Nomura, H. Hosono, J. Disp. Technol., 5, 273-288 (2009)
2. B. Yaglioglu, H.Y. Yeom, H.Y. Beresford, D.C. Paine, Appl. Phys. Lett.,89, 062103 (2006)
3. M.P. Taylor, D.W. Readey, M.F.A.M. van Hest, C.W. Teplin, J.L. Alleman, M.S. Dabney, L.M. Gedvilas, B.M. Keyes, B. To, J.D. Perkins, D.S. Ginley, Adv. Funct. Mater., 18, 3169-3178 (2008)
4. P. Poodt, A. Lankhorst, F. Roozeboom, C. Spee, D. Maas, A. Vermeer, Adv. Mater., 22, 3564-3567 (2010)
5. A. Illiberi, R. Scherpenborg, F. Roozeboom, P. Poodt, ECS Journal of Solid State Science and Technology, 3(5), 111-114 (2014)
6. Y. Creyghton, A. Illiberi, M. Mione, W. van Boekel, N. Debernardi, M. Seitz, F. van den Bruele, P. Poodt, F. Roozeboom, Proc. Int. Conf. on Coatings on Glass and Plastics (ICCG 2016), Braunschweig, Germany, June 12-16, 2016, pp. 93-97