| AVS 64th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology Division | Wednesday Sessions |
| Session NS+MN+MS+SS-WeA |
| Session: | Nanopatterning, Nanofabrication and 3D Nanomanufacturing |
| Presenter: | Jonathan Wyrick, NIST |
| Authors: | J. Wyrick, NIST P. Namboodiri, NIST X. Wang, NIST R. Murray, NIST J.A. Hagmann, NIST K. Li, NIST S.W. Schmucker, NIST M.D. Stewart, NIST C. Richter, NIST R.M. Silver, NIST |
| Correspondent: | Click to Email |
STM based hydrogen lithography has proven to be a viable route to fabrication of atomic-precision planar electronic devices. These devices are realized by a patterning step followed by dopant deposition and incorporation, and ultimately encapsulation with epitaxial Si. Atomically precise tunnel junctions, SETs, and Quantum Dots are examples of components that can be fabricated using hydrogen lithography.
The strength of this technique is the ability to control the lateral placement of phosphorus atoms in a single atomic layer of Si with sub-nanometer precision. At the same time, it presents challenges that must be overcome if devices are to be interfaced to the outside world. Locating and then fabricating aligned electrical contacts to buried devices is non-trivial, and becomes easier as the size of buried features is increased, but this is done at the expense of increased writing times and exposure to potential contamination.
We present a strategy for contacting buried devices aimed at minimizing the write-times associated with STM based fabrication by maximizing the positional accuracy with which we can locate subsurface structures. This is done by employing STM fabricated fiducials, AFM topography scans, Kelvin Probe Microscopy, and dark field optical microscopy. The data from each technique can be aligned and corrected for distortions, allowing us to determine buried device locations to better than 200nm accuracy.