| AVS 64th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology Division | Wednesday Sessions |
| Session NS+MN+MS+SS-WeA |
| Session: | Nanopatterning, Nanofabrication and 3D Nanomanufacturing |
| Presenter: | Richard Silver, NIST |
| Authors: | R.M. Silver, NIST X. Wang, University of Maryland, College Park P. Namboodiri, NIST J. Wyrick, NIST S.W. Schmucker, NIST M.D. Stewart, NIST R. Murray, NIST J.A. Hagmann, NIST C. Richter, NIST |
| Correspondent: | Click to Email |
Atomically precise device fabrication is a technique that enables a new class of atom-based electronic structures with applications ranging from novel low dimensional materials to devices for quantum information processing. Deterministic placement of individual dopant atoms in the Si lattice is achieved using hydrogen-based scanning probe lithography. Controlling the position and electronic or quantum state of deterministically placed atoms in a solid state environment enables novel devices such as single atom transistors and solid state qubits.
However, fabricating functional atom-based devices is particularly challenging because of the need for exceptional ultra-high vacuum, near perfect atomic order, and low temperature epitaxial silicon overgrowth. This, coupled with sensitivity of atomic positional accuracy to thermal processing, and variability in scanning tunneling microscope patterning conditions, make exquisite control of process conditions essential.
In this presentation, we will focus on measurements and characterization of ultra-thin, atomically abrupt, highly doped low-dimensional devices and strategies for contacting these devices. We will describe our methods to align and contact buried devices and address significant challenges in making robust electrical contact to buried devices. We will present low-temperature electrical measurement results from atomically abrupt wires and tunnel junctions with coplanar gates. We have studied the effects of process conditions on device dimensionality and electrical performance in the context of extensive analysis of delta layer formation with optimized locking layer epitaxial growth techniques to enhance the confinement of Phosphorus dopant atoms. Low temperature transport measurements are used to investigate materials properties, effects from atomic imperfection and quantum transport phenomena.