| AVS 64th International Symposium & Exhibition | |
| Manufacturing Science and Technology Group | Wednesday Sessions |
| Session MS+AS-WeA |
| Session: | Advanced Surface, Interface, and Structural Characterization for High Volume Manufacturing |
| Presenter: | Michael Henry, Sandia National Laboratories |
| Authors: | M.D. Henry, Sandia National Laboratories R.P. Timon, Sandia National Laboratories T.R. Young, Sandia National Laboratories E.A. Douglas, Sandia National Laboratories B. Griffin, Sandia National Laboratories |
| Correspondent: | Click to Email |
Substitution of Al by Sc has been predicted and demonstrated to improve the piezoelectric response with applications in radio frequency (RF) filter technologies. Although cosputtering has achieved Sc incorporation in excess of 20%, industrial processes require single target sputtering and is currently limited. However, the major concern with sputter deposition of ScAl is the control over growth of inclusions while simultaneously controlling film stress for suspended MEMS structures. Our work on 12% Sc suggests, with a direct relationship between the inclusion occurrences and compressive film stress, deposition control can suppress the inclusion growth by increasing the compressive stress. Too much compressive stress can prevent suspension of MEMS devices due to Euler buckling.
This work will describe the RF sputtering deposition and major parameter control over the deposition of Sc0.12Al0.88N. We will continue to show a multistep deposition which begins with a process of high compressive stress suppressing the inclusions and then drive the film back towards lower compressive stress levels such that an inclusion free low compressive stress film is deposited such that suspended resonators can be formed. To detail piezoelectric film properties, both top metal and top/bottom metal resonators are demonstrated from 500 MHz to 2 GHz.