AVS 62nd International Symposium & Exhibition
    Plasma Science and Technology Friday Sessions

Session PS+SS+TF-FrM
Atomic Layer Etching (ALE) and Low-Damage Processes II

Friday, October 23, 2015, 8:20 am, Room 210B
Moderator: Toshihisa Nozawa, Tokyo Electron Ltd.


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS+SS+TF-FrM1 Invited Paper
Atomic Layer Etching of Silicon Dioxide to Enable Self-aligned Contact Integration
B. Finch, H. Singh, Eric Hudson, Lam Research Corporation
9:00am PS+SS+TF-FrM3
High Performance Self Align Contact Etching with Newly developed Quasi-ALE
Akihiro Tsuji, Tokyo Electron Miyagi Limited, Japan, M. Tabata, H. Watanabe, T. Katsunuma, Tokyo Electron Miyagi Limited, M. Honda, Tokyo Electron Miyagi Limited, Japan
9:20am PS+SS+TF-FrM4
Fluorocarbon Based Atomic Layer Etching of Si3N4 and Selectivity of SiO2 over Si3N4
Chen Li, D. Metzler, G.S. Oehrlein, University of Maryland, College Park, C.S. Lai, M. Danek, E.A. Hudson, A. Dulkin, Lam Research Corporation
9:40am PS+SS+TF-FrM5
Chamber Wall Effect for Fluorocarbon Assisted Atomic Layer Etching of SiO2 Using Cyclic Ar/C4F8 Plasma
Masatoshi Kawakami, Hitachi High-Technologies, Japan, D. Metzler, C. Li, G.S. Oehrlein, University of Maryland, College Park
10:00am PS+SS+TF-FrM6 Invited Paper
Potential Solutions for Atomic Precision Etching
Olivier Joubert, LTM-CNRS, France, E. Despiau-Pujo, LTM, France, G. Cunge, LTM - CEA/LETI, France, L. Vallier, J. Dubois, A. Tavernier, Univ. Grenoble Alpes-CNRS-CEA/Minatec-LTM, France, O. Luere, S. Banna, Y. Zhang, Applied Materials
10:40am PS+SS+TF-FrM8
Molecular Dynamics Simulations of Atomic Layer Etching by Low Energy Ions
Jun-Chieh Wang, S. Rauf, J.A. Kenney, L. Dorf, K.S. Collins, Applied Materials Inc.
11:00am PS+SS+TF-FrM9
Atomic Layer Etching of InGaAs using Cl2/Ar Ion Beam
Jinwoo Park, D.H. Yun, H.S. Kim, G.Y. Yeom, Sungkyunkwan University, Republic of Korea
11:20am PS+SS+TF-FrM10
InGaN Quantum Nanodisks Fabrication by Bio-Template and Neutral Beam Etching
Yi-Chun Lai, National Chiao Tung University, Taiwan, Republic of China, A. Higo, C. Thomas, C.Y. Lee, T. Tanikawa, K. Shojiki, S. Kuboya, R. Katayama, Tohoku University, Japan, T. Kiba, Hokkaido University, Japan, I. Yamashita, Nara Institute of Science and Technology, Japan, A. Murayama, Hokkaido University, Japan, P.Yu. Yu, National Chiao Tung University, Taiwan, Republic of China, S. Samukawa, Tohoku University
11:40am PS+SS+TF-FrM11
Towards a Nanoscale Plasma Etching Precision: Molecular Dynamics Simulations of Si-Cl Interactions
Paulin Brichon, Univ. Grenoble Alpes-CNRS-CEA/Minatec-LTM,38000 Grenoble-France, E. Despiau-Pujo, LTM, France, O. Mourey, Univ. Grenoble Alpes-CNRS-CEA/Minatec-LTM,38000 Grenoble-France, G. Cunge, LTM - CEA/LETI, France, O. Joubert, Univ. Grenoble Alpes-CNRS-CEA, France