| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | EM+MS-ThA1 Invited Paper Accelerating Adoption of Wide Band Gap Semiconductors though Manufacturing Innovation John Muth, North Carolina State University |
| 3:00pm | EM+MS-ThA3 Invited Paper InGaN/GaN Nanostructures for Efficient Light Emission and White Light Emitting Diodes Y. Nakajima, P. Daniel Dapkus, Y. Lin, University of Southern California |
| 4:00pm | EM+MS-ThA6 Tuning Bandgap Through Cation Ordering in New PV Materials Steve Durbin, R.A. Makin, N. Feldberg, Western Michigan University, J.P. Mathis, N. Senabulya, R. Clarke, University of Michigan |
| 4:20pm | EM+MS-ThA7 Comparison Studies of GaN Grown with Trimethylgallium and Triethylgallium for Optoelectronic Applications Mustafa Alevli, Marmara University, Turkey, A. Haider, Bilkent University, Turkey, N. Gungor, Marmara University, Turkey, S. Kizir, S. Alkis, A.K. Okyay, N. Biyikli, Bilkent University, Turkey |
| 4:40pm | EM+MS-ThA8 Growth Control of InGaN Alloys and Nanostructures by Migration-Enhanced, Plasma-Assisted MOCVD Daniel Seidlitz, I. Senevirathna, Y. Abate, N. Dietz, Georgia State University, A. Hoffmann, Technical University Berlin, Germany |
| 5:00pm | EM+MS-ThA9 GaN on Rare-earth Oxide Buffer –A New Player in GaN-on-Si Technology Rytis Dargis, A. Clark, Translucent Inc. |
| 5:20pm | EM+MS-ThA10 Plasma Enhanced Atomic Layer Deposition of Al2O3 on AlGaN/GaN High Electron Mobility Transistors Xiaoye Qin, R.M. Wallace, University of Texas at Dallas |