| AVS 62nd International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM+MS-ThA |
| Session: | III-N Nitrides II |
| Presenter: | Daniel Seidlitz, Georgia State University |
| Authors: | D. Seidlitz, Georgia State University I. Senevirathna, Georgia State University Y. Abate, Georgia State University N. Dietz, Georgia State University A. Hoffmann, Technical University Berlin, Germany |
| Correspondent: | Click to Email |
This contribution will present results of the structural and optoelectronic properties of InN and InGaN alloys and nanostructures as a function of temperature, reactor pressure and the temporal injection of metalorganic precursors and plasma activated nitrogen species (e.g. N*/NH*/NHx*).
Migration-enhanced plasma-assisted metal organic chemical vapor deposition (MEPA-MOCVD) is utilized for the growth of InN and InGaN layers and nanocomposites at growth temperatures in the range of 450°C and 700°C. The custom-built MEPA-MOCVD system consists of a showerhead reactor combined with a hollow cathode (HC) plasma source (Meaglow) powered by a high-frequency (13.56 MHz) RF generator with a output power up to 600W. The HC plasma source creates reactive nitrogen fragments, which afterglow region approaches the growth surface. Plasma emission spectroscopy (PES) is utilized for real-time information about the formation and concentration of plasma generated active species. Added provisions allow a spatial and temporal injection of both, nitrogen and metalorganic precursors and enable the control of the epitaxial layers and their composition during the growth process.
Ex-situ investigations by Atomic Force Spectroscopy (AFM) as well as Fourier Transform Infrared Reflectance (FTIR) and Raman spectroscopy assess structural and optoelectronic properties (e.g. surface roughness, high-frequency dielectric constant e∞, film thickness, etc.) of the deposited InN and InGaN nanostructures.
Correlation of the in-situ obtained plasma characteristics with the ex-situ results of the structural and optical properties of the InN and InGaN nanostructures are provided, as well as correlations between plasma afterglow regime position above the growth surface and the epitaxial layer properties. The aim of these studies is to access the phase stability regime of indium-rich ternary group III-nitrides as a function of growth temperature, kinetic energy of plasma species, reactor pressure, and temporal and spatial precursor supply.