| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | Jake McLain, Center for Plasma Material Interactions, University of Illinois, USA |
| Authors: | J.T. McLain, Center for Plasma Material Interactions, University of Illinois, USA P. Raman, Center for Plasma Material Interactions, University of Illinois, USA I.A. Shchelkanov, Center for Plasma Material Interactions, University of Illinois, USA S. Armstrong, Kurt J. Lesker Company D.N. Ruzic, Center for Plasma Material Interactions, University of Illinois, USA |
| Correspondent: | Click to Email |
High Power Pulsed Magnetron Sputtering (HPPMS) is a magnetron sputtering technique that utilizes high peak power pulses applied to the sputtering target. HPPMS is capable of producing a much higher fraction of sputtered material ions, though has the major drawback of intrinsically low deposition rates for all materials. The low deposition rate is a byproduct of the “return effect”, seen in systems that have high amounts of sputtered ions. [1]. HPPMS provides better film quality, and in some cases enables unique deposition processes. [2] Despite the characteristic better film quality, the inherently low deposition rates obstruct wide industrial implementation.
Center for Plasma Material Interactions (CPMI) has developed the “ε” magnet pack, which is capable of HPPMS deposition rates comparable to DC Magnetron Sputtering (dcMS) deposition rates at 500W and 10mTorr. [3] To achieve that high deposition rate, the “ε” magnetic configuration implements a field topology referred to as “opened field lines”.
All previous research was done in cylindrically symmetric configurations, but most large- scale industrial tools utilize liner magnetrons of up to several meters long. This work is dedicated to the development of a rectangular magnet pack compatible with commercially available magnetrons, in order to provide higher deposition rates of HPPMS in a wider range of technological processes. Electron confinement is discussed in detail, and the sputtering rate from the rectangular pack at different cathode-substrate distances in a HPPMS discharge is modeled.
[1] L. Meng, H. Yu, M. M. Szott, J. T. McLain, and D. N. Ruzic, J. Appl. Phys. 115, 223301 (2014).
[2] J. Alami, K. Sarakinos, G. Mark, and M. Wuttig, Appl. Phys. Lett. 89, 154104 (2006).
[3] P. Raman, I. Shchelkanov, J. McLain, and D. N. Ruzic, J. Vac. Sci. Technol. A 33, 031304 (2015).