Paper PS-ThP29
Deposition of Silicon Nitride Coatings by Pulser Laser Deposition Technique

Thursday, October 22, 2015, 6:00 pm, Room Hall 3

The Silicon Nitride present problems to be deposited by Pulsed Laser Deposition (PLD) Technique using a pure nitrogen atmosphere and silicon target because the low nitrogen reactivity produce a partial oxidation during the deposition such as the oxygen amount reach values around to 20at%. The aim of this research was deposited silicon nitride at different nitrogen pressure and energy density to found the deposition parameters to reduce the oxygen included on the coatings. The coating were characterized by perfilometry, Routherford Back Scattering (RBS), Raman Spectroscopy, UV-bis Spectroscopy and Nanoindentation while the Plasma properties were characterized by Langmuir probe and Optical Emission Spectroscopy (OES). The OES results showed that the maximum nitrogen activity is reached at 4x10^-3mbar (N₂⁺ 391.4nm) and decrease at the nitrogen pressure increase. The average ion kinetic energy and the plasma density decrease from 120 to 100eV and 3.26x10¹³ to 4.89x10¹¹ ion/cm³ at nitrogen pressure of 4x10^-3 and 6x10^-2 mbar respectively.