AVS 62nd International Symposium & Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS-ThP

Paper PS-ThP26
Capacitively Coupled Indirect Plasma Discharge - 2 Dimensional Fluid Model Simulation Study

Thursday, October 22, 2015, 6:00 pm, Room Hall 3

Session: Plasma Science and Technology Poster Session
Presenter: Pei-Siou Luo, National Tsing Hua University
Authors: P.S. Luo, National Tsing Hua University
T.Y. Chang, National Tsing Hua University
K.C. Leou, National Tsing Hua University, Taiwan, Republic of China
Correspondent: Click to Email
Capacitively coupled indirect plasma (CCIP) where a grounded mesh is placed between the two electrodes of a conventional CCP have gain a great deal of interests recently for applications where uniform radicals generated by the plasma are needed for material processing while harmful energetic ions or high energy photons should be minimized. In this study, a rf (13.56 MHz) CCIP Ar/H2 discharge has been investigated by numerical simulation based on fluid model, with 12

species and 28 gas phase reactions. Simulation results show that plasma density, as well as the number densities and fluxes of H, important reactive species for applications, increase with rf power, as expected. Simulation Results show that, as a result of the grounded mesh/grid that separating the two chambers, the flux of both ionic and reactive neutral species drop significantly, by a factor of ~1/1000 - 1/10000, from the top main chamber to the bottom drift chamber. More importantly, the plasma density also decreases significantly and the resulting plasma potential in the bottom chamber is only ~10% of that in the top main chamber. This, in term, implies that the ion energy flux incident on the grounded bottom electrode should be minimal, and thus damage to the wafer surface due to ion bombardment can be significantly reduced. Detailed simulation results will be presented.

*Work supported by the National Science Council of ROC.