| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | Bradley Nordell, University of Missouri-Kansas City |
| Authors: | M.M. Paquette, University of Missouri-Kansas City B.J. Nordell, University of Missouri-Kansas City T.D. Nguyen, University of Missouri-Kansas City S. Dhungana, University of Missouri-Kansas City A.N. Caruso, University of Missouri-Kansas City W.A. Lanford, University at Albany-SUNY P. Henry, Intel Corporation S.W. King, Intel Corporation |
| Correspondent: | Click to Email |
Advanced metal interconnect patterning schemes require a number of materials with specific characteristics and unique etch properties. Currently, many such materials fall within the Si/O/C/N/H phase diagram, and it is becoming increasingly difficult to achieve adequate etch selectivity. Amorphous hydrogenated boron carbide (a-BxC:Hy) is a unique material with appealing properties for a variety of interconnect applications including a low dielectric constant and excellent mechanical properties. Importantly, because it breaks away from the Si/O/C/N/H stoichiometry, it offers unique etch chemistries, and may therefore represent an important addition to the multiple patterning tool box. We investigate the wet and dry etch behaviors of a-BxC:Hy films of varying atomic composition and density in comparison with those of silicon-based oxides, nitrides, and carbides.