AVS 62nd International Symposium & Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS-ThP

Paper PS-ThP17
A MEMS Approach to Making Quantitative Measurements of IIEE Yields in the Presence of Moderate Electric Fields

Thursday, October 22, 2015, 6:00 pm, Room Hall 3

Session: Plasma Science and Technology Poster Session
Presenter: Keith Hernandez, University of Texas at Dallas
Authors: K. Hernandez, University of Texas at Dallas
A. Press, University of Texas at Dallas
D. Urrabazo, University of Texas at Dallas
M.J. Goeckner, University of Texas at Dallas
L.J. Overzet, University of Texas at Dallas
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Semiconductor MEMs mechanical switches are prone to failure due to electrical breakdown across gaps between contacts. Electrical breakdown is characterized by Paschen’s curve which is a function of both ion induced electron emission (IIEE) yield, electrode spacing, pressure and gas type. Paschen’s curve also applies to low frequency microdischarges where the IIEE is one important mechanism of electron emission. Despite the widespread impact of the electrical breakdown phenomenon, few direct measurements of IIEE yield from semiconductors exist. In addition, the semiconductor IIEE yield data currently available do not pertain to practical MEMS or DC microdischarge applications, since the measurements were made on atomically clean and electric field free surfaces. The electric field free aspect of the previous measurements is the result of the macroscopic scale of the electron detection system. To address this issue, we have designed and begun the fabrication of a microfabricated electron detection system (mEDS). This system consists of the basic components of a current-based electron detection system: Electron suppressor- to prevent electrons from escaping collection, an electron collector and sample. A guard layer was also introduced in between the electron suppressor and collector to mitigate leakage current. Unlike previously designed electron detection systems, this device is capable of imposing a controllable uniform electric field (up to 10 V/um). Thus, by integrating the mEDS with an ion source we will have the ability to make IIEE yield measurements under varying electric field conditions. Thus, measurements of field enhanced IIEE and/or ion enhanced field emission become possible. In addition, this mEDS structure can be built on to any substrate that can withstand 250 ⁰C and high vacuum. This poster will present the design, modeling and fabrication involved in bringing the mEDS to fruition.

Acknowledgement: This material is based upon work supported by the Department of Energy under Award Number DE-SC-0009308.