AVS 62nd International Symposium & Exhibition | |
Plasma Science and Technology | Wednesday Sessions |
Session PS+TF-WeA |
Session: | Plasma Deposition and Plasma Assisted ALD |
Presenter: | Peter Awakowicz, Ruhr-University Bochum, Germany |
Authors: | P. Awakowicz, Ruhr-University Bochum, Germany F. Mitschker, Ruhr-University Bochum, Germany A. Nave, INP-Greifswald, Germany J. Röpcke, INP-Greifswald G. Grundmeier, Univ. of Paderborn |
Correspondent: | Click to Email |
Thin SiO2 barrier layers are deposited by microwave plasma enhanced CVD (PECVD). The pulsed mw power is fed in with a plasma line system. In addition, the flat or hollow PET substrates are rf-biased in order to increase film quality and minimize defect density.
Plasma diagnostics is performed with quantitative optical emission spectroscopy (Q-OES) based on a collisional radiative model for nitrogen and confirmed with multipole resonance probe measurements. In addition, nine carbon hydride and carbon oxide species are measured by laser absortion IR measurement while plasma diagnostics is performed.
Analysis of the 30 nm thin films are performed by XPS measurements and defect density measurements. Film porosity is measured with proton exchange measurements and cross linking by looking at the fine structure of the Si 2p peak with highly resolved XPS.
Finally it can be shown that good barrier improvement is realized with the applied deposition method on PET foils and a correlation between plasma parameters and film qualtiy is presented.