AVS 62nd International Symposium & Exhibition | |
Plasma Science and Technology | Wednesday Sessions |
Session PS+TF-WeA |
Session: | Plasma Deposition and Plasma Assisted ALD |
Presenter: | Yves Creyghton, TNO Technical Sciences, Netherlands |
Authors: | Y.L.M. Creyghton, TNO Technical Sciences, Netherlands J. Emmelkamp, TNO Technical Sciences, Netherlands F. Roozeboom, TNO Technical Sciences, Netherlands |
Correspondent: | Click to Email |
Spatial ALD (S-ALD) is an emerging technology with substrates passing a series of spatially separated gas injector zones. This concept enables up to 100x faster deposition rates with respect to conventional ALD. TNO constructed an S-ALD process toolbox for high throughput ALD on wafers, sheets and foils. Recently, SDBDs were selected to extend the toolbox to plasma enhanced ALD. Implementing an SDBD source in an existing rotary wafer reactor, homogeneous PE-S-ALD was shown for the first time. The operating temperature was reduced down to 80°C allowing deposition on polymer foils. Using plasma in N2, N2-O2 and N2-H2, new materials were made like TiN, SiO2, TiO2 , InZnO and Ag, so far inaccessible for atmospheric pressure S-ALD.
Contrary to low-pressure plasma, atmospheric plasma tends to filamentary structures (micro-discharges). The past 2 decades, world-wide efforts have been undertaken to improve plasma homogeneity in DBD systems with the electrodes located at both substrate sides and using He gas, short pulses, high frequencies and gas flows. Single-sided SDBD electrode configurations provide remarkably homogeneous and reproducible plasmas in practical gases. Usually the electrical discharge is a mixture of surface glow and micro-discharges, the latter being generated with a sufficient density to reach homogeneous deposition. There is a striking analogy between the saturating charge principle of the planar SDBD and the surface limited surface reaction, as characteristic for ALD processes. Merging both technologies yields the best of two worlds.
As a standard condition, SDBD plasma has been generated parallel and close to the rotating substrate. Obviously, when conductive, semiconductor or highly capacitive substrates are used the SDBD plasma may generate filaments towards the substrate and/or electrostatically interact with electric field sensitive structures. Thus we built various alternative remote SDBD sources minimizing electrical-substrate interaction. For the study of the influence of geometry and flow parameters, thin films were deposited by PE-S-ALD using the different sources.
Also static substrate tests were done with both parallel plasma and remote jet treatments using amorphous C-layer etching to visualize the plasma reactivity and homogeneity. The plasma structures visualized by C-layer transmission show the importance of control of flow and plasma homogeneity. The spatial discharge study is complemented by visual light photography and IR thermography. The experimental data have been validated with a CFD model of plasma species transport yielding a deep understanding of the effects of flow, diffusion and temperature of the SDBD source.