| AVS 62nd International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS+AP+SE-ThA |
| Session: | Advanced Ion Implantation and Plasma Doping |
| Presenter: | Anthony Renau, Applied Materials, Varian Semiconductor Equipment |
| Correspondent: | Click to Email |
Since the 1960s and 1970s ion implantation has been used for the p- and n-type doping of semiconductors. The ability of ion implantation to abruptly alter the stoichiometry of the substrate has made it a very attractive technology for making transistors with the required drive characteristics, by accuratley manipulating dopant concentrations in the contact and channel regions. It is used to control carrier density, channel length, contact resistance, isolation and other key device attributes.
There have been significant enhancements to enable ion implant to continue to meet semiconductor doping needs. These include the development of ribbon ion beams, substrate temperature control, accurate beam angle control and novel methods for precisely varying the dose over the substrate. These improvements have also enabled the technology to be used for a rapidly growing number of non-doping applications.
Today, the majority of implants are done not for doping, but are instead used for some form of materials modification or engineering. These include, for example, strain control, pre- or post-treatments to improve some other process step, and lattice enginering for isolation or diffusion control.
In this paper we will discuss some of the improvements to the technology and the applications that have benifited from these. We will also describe how directed ribbon beam technology, similar to that used for implanters, can also be used to improve materials engineering applications as diverse as etch and CMP.