AVS 61st International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions

Session PS1-WeM
Plasma Based Ion Implantation and Ion-Surface Interactions

Wednesday, November 12, 2014, 8:00 am, Room 305
Moderator: Aseem K. Srivastava, Applied Materials, Inc.


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am PS1-WeM1 Invited Paper
Dosimetry Challenges for Plasma Doping and Ion Implantation
Bo Vanderberg, L.M. Rubin, A.M. Ray, Axcelis Technologies, Inc.
8:40am PS1-WeM3 Invited Paper
Ion Implantation Challenges and Applications for Future Memory Devices
Allen McTeer, Micron Technology
9:20am PS1-WeM5 Invited Paper
Challenges in Ion Implantation
Joseph Olson, S. Chennadi, G. Gammel, N. Pradhan, F. Sinclair, S. Todorov, M. Welsch, R. White, Applied Materials, Varian Semiconductor Equipment
11:00am PS1-WeM10
Plasma Doping Process Monitoring Diagnostics
Yuuki Kobayashi, Tokyo Electron Limited, Japan, P. Ventzek, Tokyo Electron America, Inc., K. Yamashita, S. Nishijima, M. Oka, H. Ueda, Y. Sugimoto, M. Horigome, T. Nozawa, Tokyo Electron Limited, Japan
11:20am PS1-WeM11
Control over the Ion Flux Obtained by Sawtooth-like Waveforms in Radiofrequency Capacitively Coupled Plasmas
Bastien Bruneau, T. Novikova, T. Lafleur, J.-P. Booth, E.V. Johnson, Ecole Polytechnique, France
11:40am PS1-WeM12
Surface Roughening Mechanisms and Roughness Suppression during Si Etching in Inductively Coupled Cl2 Plasmas
Nobuya Nakazaki, H. Matsumoto, K. Eriguchi, K. Ono, Kyoto University, Japan
12:00pm PS1-WeM13
Ion Induced Electron Emission from Semiconductors: An Investigation into Fermi Level and Surface Electric Field Effects
David Urrabazo, M.J. Goeckner, L.J. Overzet, University of Texas at Dallas