| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | EM1-ThA1 Invited Paper Mos Quantum Bits for Adiabatic and Non-Adiabatic Quantum Computing Malcom Carroll, Sandia National Laboratories |
| 3:00pm | EM1-ThA3 28Si Enriched In Situ to 99.9998 % for Quantum Computing Devices Kevin Dwyer, University of Maryland, College Park, J. Pomeroy, D. Simons, National Institute of Standards and Technology (NIST) |
| 3:20pm | EM1-ThA4 Computational Analysis of Interdiffusion in Silicon-Germanium Alloy Films Subject to Patterned Stress Fields Daniel Kaiser, University of Pennsylvania, S. Ghosh, S.M. Han, University of New Mexico, T.R. Sinno, University of Pennsylvania |
| 4:00pm | EM1-ThA6 Scanning Capacitance Microscopy of Atomically-Precise Donor Devices in Si Shashank Misra, E. Bussmann, M. Rudolph, S.M. Carr, G. Subramania, G. Ten Eyck, J. Dominguez, M.P. Lilly, M. Carroll, Sandia National Laboratories |
| 4:20pm | EM1-ThA7 SiGe on sSOI: Nanoscale Engineering of Structures and Devices on Surfaces Esmeralda Yitamben, E. Bussmann, Sandia National Laboratories, R. Butera, Laboratory for Physical Sciences, S. Misra, M. Rudolph, S.M. Carr, M. Carroll, Sandia National Laboratories |
| 4:40pm | EM1-ThA8 Creating a Responsive SiGe Substrate to Form 2D Array of Ge Quantum Dots Using Stress-induced Near-surface Compositional Redistribution S. Ghosh, University of New Mexico, D. Kaiser, T.R. Sinno, University of Pennsylvania, Sang M. Han, University of New Mexico |
| 5:00pm | EM1-ThA9 DFTMD Modeling of Atomic Scale Structure Requirements for amorphous Sub 0.5 EOT Gate Oxides T. Kent, T. Kaufman-Osborn, M. Edmonds, S.W. Park, J.H. Park, I.J. Kwak, E.A. Chagarov, University of California, San Diego, P. Choudhury, New Mexico Institute of Mining and Technology, R. Droopad, Texas State University, Andrew C. Kummel, University of California, San Diego |
| 5:20pm | EM1-ThA10 Crystalline SrHfO3 Grown Directly on Ge (001) by Atomic Layer Deposition as a Gate Oxide for High-Mobility Ge-based Transistors Martin McDaniel, T.Q. Ngo, A.B. Posadas, C. Hu, S.N. Chopra, E.T. Yu, A.A. Demkov, J.G. Ekerdt, The University of Texas at Austin |
| 5:40pm | EM1-ThA11 The Influence of Carbon Incorporation into Gd2O3 High-k Gate Dielectric on the Electronic Behavior of the MOS Stack Pini Shekhter, Technion Israel Institute of Technology, Israel, A.R. Chaudhuri, Leibniz University, Germany, A. Laha, Indian Institute of Technology Bombay, India, H.J. Osten, Leibniz University, Germany, M. Eizenberg, Technion Israel Institute of Technology, Israel |