| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM1-ThA |
| Session: | Materials for Quantum Computation |
| Presenter: | Esmeralda Yitamben, Sandia National Laboratories |
| Authors: | E. Yitamben, Sandia National Laboratories E. Bussmann, Sandia National Laboratories R. Butera, Laboratory for Physical Sciences S. Misra, Sandia National Laboratories M. Rudolph, Sandia National Laboratories S.M. Carr, Sandia National Laboratories M. Carroll, Sandia National Laboratories |
| Correspondent: | Click to Email |
The relentless increase in both density and speed that has characterized microelectronics, and now nanoelectronics, will require a new paradigm to continue beyond current technologies. One proposed such paradigm shift demands the ultimate control over the number and position of dopants in a device, which includes quantum information processing and variety of semiconductor device materials and architectures aimed at solving end-of-Moore’s law issues.
Such a work requires the development of a tool for the design of atomically precise devices on silicon and other surfaces, in hope of studying the effect of local interactions between atomic-scale structures, their microscopic behavior, and how quantum mechanical effects might influence nano-device behavior in very small structures. Demonstrations of remarkable 2D nanostructures down to single atom devices are reported here thanks to the development of scanning tunneling microscopy (STM) as an imaging and patterning tool. These include atomic-scale depassivation of a hydrogen terminated surface with an STM, toward the incorporation of dopants in silicon, and SiGe growth on strained silicon on insulator (sSOI). sSOI has been shown to be relatively insensitive to thermal relaxation and thereby provides a starting material that satisfies the requirements of both enabling high temperature surface preparation steps combined with providing a strained layer that can be capped with relaxed SiGe forming a high quality interface for gate tunable channel formation. In this talk we will present, STM and other characterization results on cleaning, hydrogen lithography, dopant incorporation and SiGe growth on sSOI.
Acknowledgments: This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories LDRD Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.