AVS 61st International Symposium & Exhibition
    Materials Characterization in the Semiconductor Industry Focus Topic Monday Sessions
       Session MC+2D+AP+AS-MoA

Paper MC+2D+AP+AS-MoA7
Characterization of Ag/CuInSe2 Thin-Film Photovoltaics by Photoelectron Spectroscopy

Monday, November 10, 2014, 4:00 pm, Room 313

Session: Characterization of III-Vs (2:00-3:20 pm)/Photovoltaics, EUV masks, etc. (3:40-4:40 pm)
Presenter: Pinar Aydogan, Bilkent University, Turkey
Authors: P. Aydogan, Bilkent University, Turkey
N. Johnson, University of Illinois at Urbana-Champaign
A. Rockett, University of Illinois at Urbana-Champaign
S. Suzer, Bilkent University, Turkey
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Photovoltaic power source technology is one of the most desirable ways to provide energy for the world of tomorrow. Hence, it is important to understand the surface, electrical and photo-induced properties of these materials in order to enhance their efficiencies. Currently used materials in photovoltaic manufacturing technology are mainly crystalline silicon, CdTe (cadmium telluride), amorphous and nanocrystalline silicon, CIS (copper indium diselenide) and CIGS (copper indium gallium selenide). In this study, we focused only on the silver/copper indium diselenide cells, which contain a CdS layer on top. X-ray photoelectron spectroscopy (XPS) that we used for analysis was modified to apply both an external photo illumination and voltage bias during data acquisition. The first part of the research focuses on the result of photo induced variations in binding energies of elements and the main objective is to understand the different binding energy shifts of each element in the Ag/CuInSe2 films in both wavelength- and intensity-sensitive fashion under illumination with three different continuous wave lasers. Furthermore, electrical charging properties of CIS/CdS thin film are studied with externally applied electrical square-wave pulses (SQW), so-called Dynamic XPS. Results will be presented with an ultimate aim of better understanding of the roles of defects affecting the performance of CIS devices. This work was supported by a joint NSF-TUBITAK collaborative research project (NSF Grant No: 1312539 TUBITAK Grant No: 212M051).