AVS 60th International Symposium and Exhibition | |
Thin Film | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | TF+AS+EM+NS+SS-ThM1 Invited Paper Understanding Strongly Correlated Complex Oxides through Epitaxial Control T.Z. Ward, Oak Ridge National Laboratory |
8:40am | TF+AS+EM+NS+SS-ThM3 Invited Paper Tracing the History of Inorganic Thin Films from ~2500 BC to the Early 1900s AD J.E. Greene, University of Illinois, Linköping University, National Taiwan University of Science and Technology |
9:20am | TF+AS+EM+NS+SS-ThM5 Metal-Insulator Transition Induced in SrVO3 Thin Films M. Gu, S.A. Wolf, J.W. Lu, University of Virginia |
9:40am | TF+AS+EM+NS+SS-ThM6 Bi-Chromatic Far-Field Optical Probing the Percolative Metal-Insulator Transition in VO2 Thin Film L. Wang, I. Novikova, The College of William and Mary, J.M. Klopf, S. Madaras, Thomas Jefferson National Accelerator Facility, E. Madaras, NASA Langley Research Center, G.P. Williams, Thomas Jefferson National Accelerator Facility, R.A. Lukaszew, The College of William and Mary |
10:40am | TF+AS+EM+NS+SS-ThM9 Magnetron Deposition of IGZO Thin Films Utilizing dc, Pulsed dc and Bipolar Power Supply P. Baroch, J. Rezek, J. Houska, University of West Bohemia, Czech Republic, P. Ozimek, A. Klimczak, Huettinger Electronic |
11:00am | TF+AS+EM+NS+SS-ThM10 Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films Made by Sputter-Deposition M. Vargas, C.V. Ramana, University of Texas at El Paso |
11:20am | TF+AS+EM+NS+SS-ThM11 Studies of Electrical and Surface Properties of High-k Dielectric Gate formed by Al2O3, HfO2, AlxHfyOz and AlHfON on Silicon via Atomic Layer Deposition V. Ou, Y.S. Lin, R. Candler, S. Franz, UCLA |
11:40am | TF+AS+EM+NS+SS-ThM12 TiO2 Film Crystallization by Post-Deposition Annealing A. Henegar, T. Gougousi, University of Maryland, Baltimore County |