| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS2-TuM1 Evaluation of Highly Selective ZrO2 and HfO2 based Hard Mask Stacks for sub 30 nm Node Dry Etch Pattern Transfer J. Paul, X. Thrun, S. Riedel, M. Rudolph, Fraunhofer Institute for Photonic Microsystems (IPMS-CNT), Germany, S. Wege, Plasway, Germany, C. Hohle, Fraunhofer Institute for Photonic Microsystems (IPMS-CNT), Germany |
| 8:20am | PS2-TuM2 Approach to LER/LWR Improvement with Combination of DCS Technology and Newly Developed Resist Material M. Honda, K. Kobayashi, Tokyo Electron Miyagi Limited, Japan, M. Yamato, K. Oyama, H. Yaegashi, H. Mochiki, Tokyo Electron Limited, Japan |
| 8:40am | PS2-TuM3 Invited Paper Metrology and Linewidth Roughness Issues during Complex High-k/Metal Gate Stack Patterning for sub-20nm Technological Nodes E. Pargon, M. Fouchier, CNRS-LTM, France, O. Ros Bengoechea, STMicroelectronics, J. Jussot, UJF, France, E. Dupuy, M. Brihoum, CNRS-LTM, France |
| 9:20am | PS2-TuM5 Possible Si Damage Formation and Redeposition in Vertical Gate Etching Processes by HBr Plasmas Y. Muraki, H. Li, T. Ito, K. Karahashi, Osaka University, Japan, M. Matsukuma, Tokyo Electron Ltd., Japan, S. Hamaguchi, Osaka University, Japan |
| 9:40am | PS2-TuM6 Impact of Etch Processes Over Dimensional Control and LWR for 14nm FDSOI Transistor Gate Patterning O. Ros, ST Microelectronics, France |
| 10:40am | PS2-TuM9 FinFET Patterning: Promises and Challenges of SIT^2 for Fin Formation for sub-40 nm Pitch Features S. Mignot, GLOBALFOUNDRIES U.S. Inc., I.C. Estrada-Raygoza, H. He, IBM, K. Akarvardar, J. Cantone, GLOBALFOUNDRIES U.S. Inc., B. Doris, IBM, A. Jacob, GLOBALFOUNDRIES U.S. Inc., S. Schmitz, J. Lee, P. Friddle, M. Goss, Lam Research Corp |
| 11:20am | PS2-TuM11 Stack Patterning Challenges for the FinFET Architecture A. Banik, S. Kanakasabapathy, S. Burns, A. Aiyar, M.J. Brodsky, IBM Corporation |
| 11:40am | PS2-TuM12 Mechanisms of Etching and Selectivity for FINFET Gate Low-k Spacer using RLSA™ Microwave Plasma Reactor with Radial Line Slot Antenna A. Raley, B. Parkinson, A. Ranjan, S. Keisuke, K. Kumar, P. Biolsi, TEL Technology Center, America, LLC |