| AVS 58th Annual International Symposium and Exhibition | |
| Thin Film Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | TF1+EM-WeA1 Application of Amorphous Zinc Tin Oxide for Memristor Devices G.S. Herman, J.S. Rajachidambaram, S. Murali, J. Conley, Oregon State University, S.P. Sanghavi, P. Nachimuthu, V. Shutthanandan, T. Varga, S. Thevuthasan, Pacific Northwest National Laboratory |
| 2:20pm | TF1+EM-WeA2 PE-MOCVD of GeTe Materials for Phase Change Memory Applications E. Despiau-Pujo, L. Dussault, C. Vallée, LTM/CNRS-UJF, France, E. Gourvest, ST Microelectronics, France, D. Jourde, S. Maitrejean, P. Michallon, CEA Leti Minatec Campus, France |
| 2:40pm | TF1+EM-WeA3 Invited Paper Embedded HfO2 based 1T1R Cells for Future RRAM Applications Ch. Wenger, T. Bertaud, Ch. Walczyk, D. Walczyk, M. Malgorzata, IHP, Germany |
| 4:00pm | TF1+EM-WeA7 Synthesis and Characterization of Multiferroic Oxides by Radical Enhanced Atomic Layer Deposition C.D. Pham, J.H. Choi, J.P. Chang, University of California Los Angeles |
| 4:20pm | TF1+EM-WeA8 Perpendicular Magnetic Tunnel Junctions based on Thin CoFeB Free Layer and Co-based Multilayer SAF Pinned Layers A. Natarajarathinam, S. Gupta, University of Alabama |
| 4:40pm | TF1+EM-WeA9 Invited Paper Characterizing the Effects of Processing on Materials for Phase Change and Spin Torque based Non-Volatile Memory Technologies E.A. Joseph, R.M. Martin, J.S. Washington, D.W. Abraham, S. Raoux, J.L. Jordan-Sweet, IBM T.J. Watson Res. Ctr., D. Miller, IBM Almaden Res. Ctr., H.-Y. Cheng, Macronix International Co., Ltd, Taiwan, R.O.C., M.C. Gaidis, M. Gajek, M. Breitwisch, IBM T.J. Watson Res. Ctr., S.-C. Lai, Macronix International Co., Ltd, Taiwan, R.O.C., Y. Zhu, R. Dasaka, R. Sawant, D. Neumayer, IBM T.J. Watson Res. Ctr., R.M. Shelby, IBM Almaden Res. Ctr., H.-L. Lung, Macronix International Co., Ltd, Taiwan, R.O.C., C.H. Lam, N.C.M. Fuller, IBM T.J. Watson Res. Ctr. |