| AVS 58th Annual International Symposium and Exhibition | |
| Plasma Science and Technology Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS-TuM1 Narrow Pitch Dual Damascene Patterning using EUV Lithography in Association with a Spin-On Trilayer Resist System F. Lazzarino, V. Truffert, B. Vereecke, S. Demuynck, IMEC, Belgium |
| 8:20am | PS-TuM2 TiN Hard Mask Integration Line Wiggling Onset: Etching Time Dependence G.A. Delgadino, Lam Research Corp. |
| 8:40am | PS-TuM3 Invited Paper Surface Reaction Control for BEOL Application M. Fukasawa, T. Tatsumi, Sony Corporation, Japan |
| 9:20am | PS-TuM5 Trench First Metal Hard Mask RIE for the 22 nm Node and Beyond Y. Feurprier, R. Gaylord, Y. Chiba, K. Kumar, D. Trickett, TEL Technology Center, America, LLC, Y. Mignot, ST Microelectronics, R. Srivastava, T. Kwon, R. Koshy, C. Labelle, GlobalFoundries, Y.J. Park, Samsung, E. Wormyo, S. Allen, IBM Research, E. Soda, Renesas Electronics, D. Horak, Y. Yin, J. Arnold, IBM Research, M. Ishikawa, H. Tomizawa, Toshiba America Electronic Components |
| 9:40am | PS-TuM6 Plasma Processing of Ti and TiN Metal Hardmasks for Dielectric Etch F. Weilnboeck, E. Bartis, S. Shachar, G.S. Oehrlein, University of Maryland, College Park, D. Farber, T. Lii, C. Lenox, Texas Instruments Incorporated |
| 11:00am | PS-TuM10 Superposition of High Negative DC Voltage in Capacitively Coupled Plasma A. Ranjan, A. Metz, A. Lisi, Y. Chiba, W. Li, Y. Feurprier, K. Kumar, P. Biolsi, TEL Technology Center, America, LLC, L. Chen, P. Ventzek, R. Sundararajan, Tokyo Electron America |
| 11:20am | PS-TuM11 Evaluation of C5HF7: A High Etch Selectivity Hydrogen-Containing Fluorocarbon Gas for Oxide Etch R.L. Bruce, IBM T.J. Watson Research Center, M. Nakamura, ZEON Chemicals L.P., S. Engelmann, E.A. Joseph, IBM T.J. Watson Research Center, G. Matsuura, ZEON Chemicals L.P., N.C.M. Fuller, E.M. Sikorski, W.S. Graham, Y. Zhang, IBM T.J. Watson Research Center, A. Itou, Zeon Corporation |
| 11:40am | PS-TuM12 Etch Uniformity Improvement Using Mid-Gap Capacitively Coupled Plasma C. Cole, A. Ko, A. Ranjan, T. Enomoto, A. Metz, K. Kumar, P. Biolsi, TEL Technology Center, America, LLC, E. Wornyo, H. Yusuff, S. Allen, R. Wise, IBM Research, C. Labelle, T. Chen, GlobalFoundries, S. Kanakasabapathy, IBM Research, Y. Mignot, STMicroelectronics |