|AVS 58th Annual International Symposium and Exhibition|
|Nanomanufacturing Science and Technology Focus Topic||Tuesday Sessions|
Click a paper to see the details. Presenters are shown in bold type.
|2:00pm||NM+NS+MS-TuA1 Invited Paper
Assessing Nanotechnologies for Volume Manufacturing
B.E. Goodlin, S. Butler, L. Colombo, R. Doering, Texas Instruments Incorporated
|2:40pm||NM+NS+MS-TuA3 Invited Paper
Material and Tool Design Challenges for Taking ALD to High-volume Production Beyond 30nm Node
B. Lu, Z. Karim, S. Ramananthan, AIXTRON Inc.
|4:00pm||NM+NS+MS-TuA7 Invited Paper
The Metal-Oxide-Metal Vacancy Drift Memristor - A CMOS Compatible, High Speed, Non-Volatile Switch for Universal Memory and Storage
R.S. Williams, J.P. Strachan, Hewlett-Packard Labs
|4:40pm||NM+NS+MS-TuA9 Invited Paper
Large Scale Graphene: Progress and Challenges
R.S. Ruoff, The University of Texas at Austin
Laser-Assisted Electron-Beam Induced Deposition and Etching
N.A. Roberts, University of Tennessee and Omniprobe, Inc., J.D. Fowlkes, Oak Ridge National Laboratory, P.D. Rack, University of Tennessee and Oak Ridge National Laboratory, G.A. Magel, H.M. Marchman, C.D. Hartfield, T.M. Moore, Omniprobe, Inc.
Channel SiGe Selective Epitaxy Process for DRAM High K Peripheral Transistors
J. Yeo, H. Hwang, S. Lee, W. Yoo, S. Ahn, I. Jeon, B. Kim, S. Nam, S. Kim, K. Jung, J. Lee, S. Jang, T. Lee, K. Huh, S. Yamada, Samsung Electronics Co., Ltd, Republic of Korea