AVS 58th Annual International Symposium and Exhibition
    Graphene and Related Materials Focus Topic Friday Sessions

Session GR+MS+EM-FrM
Graphene Device Physics and Applications

Friday, November 4, 2011, 8:20 am, Room 208
Moderator: Michael Arnold, University of Wisconsin-Madison


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am GR+MS+EM-FrM1 Invited Paper
Fabrication and Characterization of Graphene p-n Junction Devices
Ji Ung Lee, University at Albany-SUNY
9:00am GR+MS+EM-FrM3
Assembled Bilayer Graphene for Electronic Applications
Glenn Jernigan, T.J. Anderson, J.T. Robinson, J.D. Caldwell, M.D. Ancona, V.D. Wheeler, L.O. Nyakiti, J. Culbertson, A.L. Davidson, A.L. Friedman, P.M. Campbell, D.K. Gaskill, U.S. Naval Research Laboratory
10:00am GR+MS+EM-FrM6
Rectification at Graphene / Semiconductor Junctions: Applications Beyond Silicon Based Devices
Sefaattin Tongay, X. Miao, K. Berke, M. Lemaitre, B.R. Appleton, A.F. Hebard, University of Florida
10:20am GR+MS+EM-FrM7
Imaging of Electron Beam Induced Current in Epitaxial Graphene
Shin Mou, J. Boeckl, W.C. Mitchel, J.H. Park, Air Force Research Laboratory, S. Tetlak, Wyle Laboratories, W. Lu, Fisk University
10:40am GR+MS+EM-FrM8
Potassium-Ion Sensors Based on Valinomycin-Modified Graphene Field-Effect Transistors
Yasuyuki Sofue, Y. Ohno, K. Maehashi, K. Inoue, K. Matsumoto, The Institute of Scientific and Industrial Research, Osaka University, Japan
11:00am GR+MS+EM-FrM9
Band-gap Generation by using Ionic-Liquid Gate in Bilayer Graphene
Yusuke Yamashiro, Y. Ohno, K. Maehashi, K. Inoue, K. Matsumoto, Osaka University, Japan
11:20am GR+MS+EM-FrM10
Electronic Transport in Hydrogenated Graphene Films
Bernard Matis, J.S. Burgess, NRC/NRL Postdoctoral Associate, A.L. Friedman, J.T. Robinson, Naval Research Laboratory (NRL), F.A. Bulat, Sotera Defense Solutions, Inc., B.H. Houston, J.W. Baldwin, Naval Research Laboratory (NRL)
11:40am GR+MS+EM-FrM11
First-principles Study of Electronic Properties of Two Dimensional Carbon and Boron Nitride Nanomaterials
Sugata Mukherjee, S.N. Bose National Centre for Basic Sciences, India