| AVS 58th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Friday Sessions |
| Session GR+MS+EM-FrM |
| Session: | Graphene Device Physics and Applications |
| Presenter: | Bernard Matis, NRC/NRL Postdoctoral Associate |
| Authors: | B.R. Matis, NRC/NRL Postdoctoral Associate J.S. Burgess, NRC/NRL Postdoctoral Associate A.L. Friedman, Naval Research Laboratory (NRL) J.T. Robinson, Naval Research Laboratory (NRL) F.A. Bulat, Sotera Defense Solutions, Inc. B.H. Houston, Naval Research Laboratory (NRL) J.W. Baldwin, Naval Research Laboratory (NRL) |
| Correspondent: | Click to Email |
Graphene films grown by chemical vapor deposition on copper foils and exfoliated graphene flakes were hydrogenated using low kinetic energy plasma processing. The film sheet resistance can be tuned over a wide range (1 kΩ/square – 300 kΩ/square), increasing proportionally with hydrogen coverage. Variable temperature measurements demonstrate a transition from semi-metallic behavior for graphene to semiconducting behavior for hydrogenated graphene. Sheet resistance measurements as a function of temperature also suggest the emergence of a band gap in the hydrogenated graphene films. Interesting surface doping effects will be discussed in conjunction with the location of the charge neutrality point. This work was supported by the Office of Naval Research.