| AVS 58th Annual International Symposium and Exhibition | |
| Graphene and Related Materials Focus Topic | Friday Sessions |
| Session GR+MS+EM-FrM |
| Session: | Graphene Device Physics and Applications |
| Presenter: | Ji Ung Lee, University at Albany-SUNY |
| Correspondent: | Click to Email |
Graphene is a newly discovered material composed of two-dimensional array of hexagonal carbon atoms. It has a number of unique electronic properties, the most remarkable of which is the zero band-gap light-like linear electronic dispersion, giving rise to Dirac fermions. This feature can be used to make devices based on previously unexplored physical properties. For example, in analogy to optics, we describe new devices based on optics-like manipulation of electrons.
Our devices are based on graphene and bi-layer graphene p-n junctions doped using electrostatic doping techniques from buried split gates. In the present context, graphene p-n junctions do not rectify, i.e. behave as semiconductor diodes. Instead, in graphene p-n junctions, carriers launched from a point contact from one side of the junction are able to refocus back to a point on the other side of the junction. This behavior, known as the Veselago effect, can be the basis for new logic devices for replacing Si CMOS. In addition, using the same platform, we describe interconnect structures that can be reconfigured. Together, we envision a new circuit paradigm based on components that seamlessly reconfigure between devices and interconnect components.
In this talk, we describe the details of graphene p-n junction fabrication and characterization, and circuits that are enabled by the p-n junction devices. The devices are fabricated at CNSE’s state-of-the-art 300mm Si wafer fabrication line using processing techniques that leave atomically flat top oxide surface above the patterned split gates. For characterizing the p-n junctions, we perform transport and SPM measurements.