Paper AS-MoM6
An XPS Investigation of CdS Based Photoresistor During Operation

Monday, October 31, 2011, 10:00 am, Room 102

We have recently developed a technique for recording the shifts in the positions of the XPS peaks in response to different waveforms of electrical and/or optical stimuli for probing the dynamics of the developed electrical potentials originating from intrinsic or extrinsic (like doping) properties of semiconductive materials such as charging/discharging, photoconductivity, surface photovoltage, band-bending/flatting/inversion, etc.^1-6 We have also shown that fast data acquisition (in the snapshot mode) and laterally spatial resolved XPS analysis (an area mapping mode) helps us to compare and align extracted electrical behaviors and chemical information from the sample. For a better understanding of a realistic performance (or failure) of a device during operation, we have extended our measurements to a CdS based photoresistor, where we have mapped the position of the Cd3d peak over an area of 5 mm x 5mm while the device is under operation without and under photoillumination. This method allows us to detect defects and malfunctioning sites/domains. We will present our methodology with experimental results and an electrical circuit model.

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(2) Suzer, S., Sezen, H., Ertas, G., Dâna, A. Journal of Electron Spectroscopy and Related Phenomena 2010, 176, 52.

(3) Sezen, H., Ertas, G., Suzer, S. Journal of Electron Spectroscopy and Related Phenomena, 2010, 178-9, 373.

(4) Sezen H., Suzer, S. Journal of Vacuum Science and Technology A, 2010, 28, 639.

(5) Sezen, H., Ozbay, E., Aktas, O., Suzer, S. Applied Physics Letters 2011, 98, 111901.

(6) Sezen, H., Suzer, S. Journal of Spectroscopy and Dynamics (in press).