| AVS 56th International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM-TuA1 Invited Paper Process Evaluation for InGaAs n-Channel MOS Device N. Goel, Intel Assignee at SEMATECH, J. Huang, SEMATECH, H. Zhao, University of Texas-Austin, I. Ok, SEMATECH, J. Lee, University of Texas-Austin, P. Majhi, Intel Assignee at SEMATECH, P.D. Kirsch, SEMATECH |
| 2:40pm | EM-TuA3 Band Alignment at High-κ/III-V Interfaces Grown by Atomic Layer Deposition A. Wan, D. Mastrogiovanni, L. Yu, H.D. Lee, T. Feng, E. Garfunkel, T. Gustafsson, Rutgers University, M. Xu, P. Ye, Purdue University |
| 3:00pm | EM-TuA4 Reduction of Native Oxides on GaAs during Atomic Layer Deposition of Al2O3 H.D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, E. Garfunkel, Rutgers University |
| 4:00pm | EM-TuA7 Arsenic-dominated Chemistry in the Acid Cleaning of InGaAs and InAlAs Surfaces Y. Sun, Stanford Synchrotron Radiation Lightsource, P. Chen, M. Kobayashi, Y. Nishi, Stanford University, N. Goel, M. Garner, W. Tsai, Intel Corp., P. Pianetta, Stanford Synchrotron Radiation Lightsource |
| 4:20pm | EM-TuA8 Wet Treatment for Se Surface Passivation of GaAs and Ge for Advanced CMOS Applications F.S. Aguirre-Tostado, CIMAV-Monterrey, México, A. Herrera-Gómez, CINVESTAV-Qro, México, R.M. Wallace, University of Texas at Dallas |
| 4:40pm | EM-TuA9 The Effect of “Self-Cleaning” ALD Growth on the Electrical Properties of Metal/ High- κ /GaAs and Metal/high-κ/Ge Metal/ MOS Capacitors L. Yu, H.D. Lee, T. Feng, D. Mastrogiovanni, A. Wan, T. Gustafsson, E. Garfunkel, Rutgers University |
| 5:00pm | EM-TuA10 Characterization of the “Clean-Up” of the Germanium Surface by ALD using Trimethyl Aluminum and Water M. Milojevic, University of Texas at Dallas, R. Contreras-Guerrero, M. Lopez-Lopez, CINVESTAV-IPN, Mexico, J. Kim, R.M. Wallace, University of Texas at Dallas |
| 5:20pm | EM-TuA11 Processing Controlled Substrate Reactions for Deposition of Monoclinic Textured HfO2 Thin Films on Pre-Oxidized and Nitrided Ge (001) Substrates K.B. Chung, L. Miotti, K.P. Bastos, North Carolina State University, D. Nordlund, Stanford Synchrotron Research Lightsource (SSRL), G. Lucovsky, North Carolina State University |