AVS 56th International Symposium & Exhibition
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuA

Paper EM-TuA8
Wet Treatment for Se Surface Passivation of GaAs and Ge for Advanced CMOS Applications

Tuesday, November 10, 2009, 4:20 pm, Room B1

Session: High-K Dielectrics on High Mobility Substrates
Presenter: F.S. Aguirre-Tostado, CIMAV-Monterrey, México
Authors: F.S. Aguirre-Tostado, CIMAV-Monterrey, México
A. Herrera-Gómez, CINVESTAV-Qro, México
R.M. Wallace, University of Texas at Dallas
Correspondent: Click to Email
Surface passivation of III-V and Ge semiconductors is a remaining problem to realize CMOS scaling beyond the 22 nm technology node. Zinc-blende and diamond structure (100) surfaces could be passivated with a single monolayer of divalent atoms like S or Se. In this presentation we show a wet chemical treatment method for the passivation of III-V and Ge (100) substrates with Se and S. The treatment consisted of the dipping of the substrates on a dilution of metallic Se into a 22% ammonium sulfide solution. The treated surface showed 3D structures that are attributed to either clustering during the treatment or during the N2 drying step. AFM, SEM and XPS were used to analyze the surface morphology of the passivation layer and chemical bonding with the substrate atoms. C-V and J-V characteristics of MOS capacitors with and without Se passivation are discussed.