| 8:00am |
PS2-ThM1
Wave and Electrostatic Coupling in Dual Frequency Frequency Capacitively Coupled Plasmas Utilizing a Full Maxwell Solver
Y. Yang, M.J. Kushner, Iowa State University |
| 8:20am |
PS2-ThM2
Three-Dimensional Modeling of Capacitively-Coupled Plasmas with Asymmetric Reactor Elements
J.A. Kenney, S. Rauf, K. Collins, Applied Materials, Inc. |
| 8:40am |
PS2-ThM3
Flow-Plasma Interactions in Plasma Etching: A 3-Dimensional Computational Investigation
A. Balakrishna, S. Rauf, K. Collins, Applied Materials, Inc. |
| 9:00am |
PS2-ThM4
Modeling of Micro-Scale Si Etching under Plasma Molding in 2f-CCP in SF6/O2
F. Hamaoka, T. Yagisawa, T. Makabe, Keio University, Japan |
| 9:20am |
PS2-ThM5 Invited Paper
Computer Simulations of Processing Plasmas
A. Bogaerts, University of Antwerp, Belgium |
| 10:40am |
PS2-ThM9
Simulation of Profile Evolution in Shallow Trench Formation by Plasma Etching
J. Hoang, J.P. Chang, University of California, Los Angeles |
| 11:00am |
PS2-ThM10
Investigation of Micro-Trenching, Bowing and Charge Accumulation on Mask using a Dry Etching Simulator Designed for Low-Pressure High-Density Plasma
J. Saussac, J. Margot, Université de Montréal, Canada, M. Chaker, INRS-Energie, Matériaux et Télécommunications, Canada |
| 11:20am |
PS2-ThM11
Atomic-Scale Numerical Simulations of Surface Reactions in Carbon-Based Thin Film Deposition Processes
Y. Murakami, S. Horiguchi, CANON ANELVA CORPORATION Japan, S. Hamaguchi, Osaka University, Japan |
| 11:40am |
PS2-ThM12
Coupling Reaction Kinetics of Gas Phase, Reactor Wall, and Wafer Surface in C4F8 and SF6 Plasmas with Global Models
G. Kokkoris, E. Gogolides, NCSR Demokritos, Institute of Microelectronics, Greece, A. Goodyear, M. Cooke, Oxford Instruments Plasma Technology, UK |