AVS 55th International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions

Session PS1-WeM
Plasma-Surface Interactions in Materials Processing I

Wednesday, October 22, 2008, 8:00 am, Room 304
Moderators: S. Agarwal, Colorado School of Mines, L. Stafford, Universite de Montreal, Canada


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am PS1-WeM1
Studying the Interaction of Atomic Hydrogen with a-Si:H Thin Films using Evanescent-Wave Cavity Ring-Down Spectroscopy
F.J.J. Peeters, J. Zheng, I.M.P. Aarts, A.C.R. Pipino, W.M.M. Kessels, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
8:20am PS1-WeM2
Unraveling the Importance of the Bimodal Energy Distribution of Bombarding Ions in Fluorocarbon Plasma Etching
F.L. Buzzi, Y.H. Ting, A.E. Wendt, University of Wisconsin-Madison
8:40am PS1-WeM3
Diamonds and New Carbon Allotropes from Carbon Nanotubes at Room Temperature
M.J. Behr, University of Minnesota, A.R. Muniz, T. Singh, D. Maroudas, University of Massachusetts, Amherst, E.S. Aydil, University of Minnesota
9:00am PS1-WeM4
Clarification of Surface and Interface Structures Exposed to Inductively Coupled Plasma with Various Superposed Bias Frequencies and Its Implication in Plasma Damage Control
Y. Nakakubo, A. Matsuda, Y. Ueda, H. Ohta, K. Eriguchi, K. Ono, Kyoto University, Japan
9:20am PS1-WeM5
Studying Surface Damage during Dry Etching of Si(100) with Optical Second-Harmonic Generation in an Ar+/XeF2 Beam Setup
P.M. Gevers, J.J.H. Gielis, H.C.W. Beijerinck, M.C.M. van de Sanden, W.M.M. Kessels, Eindhoven University of Technology, the Netherlands
9:40am PS1-WeM6
Ion Induced Etching Reaction of SiO2 and Si by CF3+ Irradiation
K. Karahashi, S. Hamaguchi, Osaka University, Japan
10:40am PS1-WeM9
Enhanced Ground and Metastable Atom Densities in Ar Diluted N2 ICP for Nitridation of Hf Silicate
T. Kitajima, T. Nakano, National Defense Academy of Japan, T. Makabe, Keio University, Japan
11:00am PS1-WeM10
Dependence of Carbon Removal Rate on the Structure of Porous Low-k SiOCH Films during N2/H2 Plasma Processes
K. Kurihara, Toshiba Corp., Japan
11:20am PS1-WeM11
Mechanistic Influence of Substrate Temperature on the Plasma Deposition of Carbon Nitride Materials
J.M. Stillahn, E.R. Fisher, Colorado State University
11:40am PS1-WeM12
Examining Plasma-Surface Interactions During Plasma Catalytic Removal of Atmospheric Pollutants
M.M. Morgan, E.R. Fisher, Colorado State University