| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS1-FrM1 Effect of Annealing Temperature on the Response of HfO2 to Vacuum Ultraviolet Radiation J.L. Shohet, J.L. Lauer, G.S. Upadhyaya, University of Wisconsin-Madison, Y. Nishi, Stanford University |
| 8:40am | PS1-FrM2 Response of BEOL Dielectrics to VUV Radiation J.L. Lauer, J.L. Shohet, University of Wisconsin-Madison, Y. Nishi, Stanford University |
| 9:00am | PS1-FrM3 Mechanism of Plasma Ashing Damages on Porous SiOCH Films H. Yamamoto, K. Takeda, M. Sekine, M. Hori, Nagoya University, Japan |
| 9:20am | PS1-FrM4 Surface Modifications of Ultralow Dielectric Constant Materials Exposed to Plasmas under Sidewall-like Conditions M.S. Kuo, G.S. Oehrlein, University of Maryland at College Park |
| 9:40am | PS1-FrM5 Degradation Mechanisms of Structure and k Value of Low-k Film by Plasma Irradiation J. Chung, S. Yasuhara, Tohoku University, Japan, K. Tajima, H. Yano, S. Kadomura, M. Yoshimaru, N. Matsunaga, Semiconductor Technology Academic Research Center, Japan, S. Samukawa, Tohoku University, Japan |
| 10:00am | PS1-FrM6 Study of SiOxFy Passivation Layer Deposited in SiF4/O2 ICP Discharge used in Cryogenic Alternated Etching Processes J. Pereira, L.E. Pichon, R. Dussart, C.Y. Duluard, E.H. Oubensaid, H. Jiang, P. Lefaucheux, GREMI, France, M. Boufnichel, ST Microelectronics, France, P. Ranson, GREMI, France |
| 10:20am | PS1-FrM7 Anisotropic Fluorocarbon Plasma Etching of Si/SiGe Heterostructures and Induced Sidewall Damage R. Ding, M.G. Friesen, L.I. Klein, M.A. Eriksson, A.E. Wendt, University of Wisconsin-Madison |
| 10:40am | PS1-FrM8 Influences of Electrical Characteristics in Carbon Nanotubes by Neutral Beam Irradiation A. Wada, Y. Sato, Tohoku University, Japan, M. Ishida, F. Nihey, NEC Corporation, Japan, K. Tohji, S. Samukawa, Tohoku University, Japan |
| 11:00am | PS1-FrM9 Surface Modification of PTFE Surfaces with Post-Discharge RF Plasmas Operating at Low and Atmospheric Pressure N. Vandencasteele, E. Carbone, F. Reniers, Universite Libre de Bruxelles, Belgium |
| 11:20am | PS1-FrM10 CoSix Damage in Etching and Ashing Plasma K. Katahira, Sony Semiconductor Kyushu Corporation, Japan, T. Tatsumi, S. Kobayashi, M. Fukasawa, Sony Corp., Japan, T. Takizawa, M. Isobe, S. Hamaguchi, Osaka University, Japan, K. Nagahata, Sony Corp., Japan |