| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Friday Sessions |
| Session PS1-FrM |
| Session: | Plasma-Surface Interactions in Materials Processing II |
| Presenter: | A. Wada, Tohoku University, Japan |
| Authors: | A. Wada, Tohoku University, Japan Y. Sato, Tohoku University, Japan M. Ishida, NEC Corporation, Japan F. Nihey, NEC Corporation, Japan K. Tohji, Tohoku University, Japan S. Samukawa, Tohoku University, Japan |
| Correspondent: | Click to Email |
In an effort to realize carbon nanotube FET (CNT-FET), it is necessary to control electrical characteristics of grown CNTs by using plasma processes. However, the conventional plasma process induces severe damages into CNTs because charged particles and ultraviolet photons generate the defects in the CNTs. As a result, the CNT-FET could not be practically fabricated using conventional plasma processes. Here, we have proposed surface modification of CNTs by using our developed neutral beam to slove the problems and to control defects and electrical characteristics. Neutral beam can almost eliminate irradiation of charged particles and ultraviolet photons to CNTs. In this study, we irradiated Ar and N2 time-modulated neutral beam (TM-NB) to single-walled carbon nanotubes (SWCNTs). Ultra violet-visible-near infrared (UV-Vis-NIR) spectroscopy was performed to understand the electrical characteristics SWCNTs before and after Ar and N2 TM-NB irradiation. It was observed that Metal/Semiconductor peak intensity ratio was decreased after beam irradiation. This result means that the ratio of semiconductor nanotubes to metallic nanotubes increased after neutral beam irradiation. It is speculated that TM-NB mainly destroys metallic carbon nanotubes. Additionally, UV-Vis-NIR also confirmed that the band gap of SWCNTs was shifted to lower energy by the neutral beam irradiation. This result means band gap energy of SWCNTs can be controlled by the neutral beam irradiation. Based on these results, TM-NB could realize selective breaking of metallic carbon nanotubes and precise control of band gap in CNTs. As a result, we found that TM-NB could control electrical characteristics in CNT-FET.