| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-TuP1 Steady-State and Transient Hydrocarbon Production, and Retention in a-C:D Thin Films by Low Energy Impact Atomic and Molecular Deuterium Projectiles H. Zhang, Oak Ridge National Laboratory |
| PS-TuP2 Invesitgation of Growth Mechanism of Diamond-like Carbon Film M. Shinohara, Y. Matsuda, H. Fujiyama, Nagasaki University, Japan, T. Nakatani, Toyo a-tec Co. LTD., Japan |
| PS-TuP3 Impact of Combinatorial Plasma Process on the Development of Organic Low-K Dielectric Film Etching C.S. Moon, K. Takeda, Nagoya University, Japan, M. Sekine, M. Hori, Nagoya University and Japan Society of Technology Agency, Y. Setsuhara, Osaka University and Japan Society of Technology Agency, M. Shiratani, Kyushu University and Japan Society of Technology Agency |
| PS-TuP4 Surface Fluorination of Ultra High Molecular Weight Polyethylene using Electron Beam Generated Plasmas S.G. Walton, E.H. Lock, US Naval Research Laboratory, A.A. Bujanda, D.D. Pappas, US Army Research Laboratory |
| PS-TuP5 Measurement of the Isoelectric Point of Plasma Modified Surfaces and Plasma Polymerized Thin Films S. Pease, E.R. Fisher, Colorado State University |
| PS-TuP6 Plasma Processing with CH3OH K.J. Trevino, E.R. Fisher, Colorado State University |
| PS-TuP7 Efficiency Improvement of Organic Solar Cells with Plasma Patterning and Surface Treatment H. Chae, C. Pang, K. Park, D. Jung, H. Kim, Sungkyunkwan University, Republic of Korea |
| PS-TuP8 Polymer Modification by Electron Beam Generated Plasma in Argon, Oxygen and Nitrogen Environments and Their Mixtures E.H. Lock, S.G. Walton, Naval Research Laboratory |
| PS-TuP9 Synthesis of Polyethyleneglycol and Polystyrene-Like Films by Atmospheric and Low Pressure Plasmas D. Merche, B. Nisol, Universite Libre de Bruxelles, Belgium, C. Poleunis, P. Bertrand, Universite Catholique de Louvain, Belgium, F. Reniers, Universite Libre de Bruxelles, Belgium |
| PS-TuP10 Surface Reactions of the Surfaces of CoFeB Films Etched in High Density Cl2/Ar Plasma D.-P. Kim, D.-S. Um, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP11 Dry Etching Properties of TiN for Metal/High-k Gate Stack by using BCl3-based Inductively Coupled Plasma C.-I. Lee, Ansan College of Technology, Korea, D.-S. Um, D.-P. Kim, G.-H. Kim, J.-C. Woo, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP12 Dry Etching of CoFeB Films using BCl3-based Inductively Coupled Plasma for MRAM Application D.-S. Um, D.-P. Kim, Chung-Ang University, Korea, S.K. Lee, T.W. Jung, Hynix Semiconductor Inc., Korea, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP13 Temperature Dependence on Dry Etching of Al2O3 Thin Films in BCl3/Cl2/Ar Plasma X. Yang, D.-P. Kim, D.-S. Um, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP14 Aspect Ratio Dependent Twisting and Mask Effects During Plasma Etching of SiO2 in Fluorocarbon Gas Mixtures M. Wang, M.J. Kushner, Iowa State University |
| PS-TuP15 The Analysis of ZrO2 Thin Films Etching in BCl3/Cl2 Inductively Coupled Plasma H.-J. Kim, D.-P. Kim, G.H. Kim, J.-C. Woo, D.-S. Um, Chung-Ang University, Korea, C.-I. Lee, Ansan College of Technology, Korea, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP16 Effective Measurements of Plasma Process-Induced Damage Related to Dielectric Integrity Degradation on Gate Oxide using Practical Structure J. Lee, H. Lee, H. Kim, Samsung Electronics, Korea, I.S. Chung, Sungkyunkwan University, Korea |
| PS-TuP17 Reaction Mechanisms and Profile Evolution for HfO2 High-K Gate-stack Etching: Integrated Reactor and Feature Scale Modeling J. Shoeb, M.J. Kushner, Iowa State University |
| PS-TuP18 A Reduced Model for Etch Rate Prediction Based on Plasma Parameters M. Klick, L. Eichhorn, R. Rothe, Plasmetrex GmbH, Germany |
| PS-TuP19 Molecular Dynamics Simulation of Si Etching by Monoenergetic Br+, Br2+, H+, and HBr+ Ions Generated in HBr Plasmas T. Nagaoka, H. Ohta, K. Eriguchi, K. Ono, Kyoto University, Japan |
| PS-TuP20 A Novel Interatomic Potential Model for MD Simulation of Si Etching by Cl+/Br+ Containing Plasmas H. Ohta, T. Nagaoka, K. Eriguchi, K. Ono, Kyoto University, Japan |
| PS-TuP21 Numerical Simulations for a Radio-Frequency Micro-Atmospheric Pressure Plasma Jet and Coupling with Laser Diagnostics J. Waskoenig, K. Niemi, T. Gans, Queen's University Belfast, Northern Ireland |
| PS-TuP22 A Comprehensive 3D Fully Coupled Model of a Gas Discharge for the Simulation of Magnetron Sputtering Systems F.J. Jimenez, University of Alberta, Canada, D. Field, NuCryst Pharmaceuticals, Canada, S. Ekpe, S.K. Dew, University of Alberta, Canada |
| PS-TuP23 Kinetic Simulations of Dielectric Facing Plasma and Sheath under Application of Microwave Energy D. Smithe, Tech-X Corporation, R. Bravenec, Tokyo Electron America, Inc., P. Stoltz, C. Roark, Tech-X Corporation, M. Funk, L. Chen, Tokyo Electron America, Inc., E. Kase, Tech-X Corporation |
| PS-TuP24 Effects of Etching-Mask Geometry and Charging on Etching Profile Evolution H. Fukumoto, H. Ohta, K. Eriguchi, K. Ono, Kyoto University, Japan |
| PS-TuP25 Plasma Surface Texturing of Metals E. Park, K. Casey, M. Morud, K. Taylor, Medtronic, Inc. |