AVS 55th International Symposium & Exhibition
    Plasma Science and Technology Tuesday Sessions

Session PS-TuA
Fundamentals of Plasma-Surface Interactions I

Tuesday, October 21, 2008, 1:40 pm, Room 304
Moderator: K.P. Giapis, California Institute of Technology


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

1:40pm PS-TuA1
Examining Sidewall Formation, Passivation, and Etching in Nanometer-Scale Feature Fabrication using Molecular Dynamics Simulation
J.J. VĂ©gh, D.B. Graves, University of California, Berkeley
2:00pm PS-TuA2
What are the Limiting Factors for Etching sub-10nm Si Holes?
Y. Zhang, E.M. Sikorski, B.N. To, IBM Research
2:20pm PS-TuA3 Invited Paper
Three Dimensional Modeling of Surface Profile Evolution During Plasma Etching (Plasma Prize Lecture)
H.H. Sawin, Massachusetts Institute of Technology
3:00pm PS-TuA5
3-Dimensional Monte Carlo Simulation and Experimental Measurements of Surface Roughness under Plasma Etching
W. Guo, H. Kawai, H.H. Sawin, Massachusetts Institute of Technology
4:00pm PS-TuA8
Scaling Relationships of Polymer Surface Roughening with Energy Density and Surface Composition during Plasma Processing
S. Engelmann, F. Weilnboeck, R.L. Bruce, G.S. Oehrlein, University of Maryland, College Park, C. Andes, Rohm and Haas Electronic Materials, D.B. Graves, D.G. Nest, University of California, Berkeley, E.A. Hudson, Lam Research
4:20pm PS-TuA9
Plasma VUV-induced Degradation of Polymer Films: Effects of Radiation Wavelength
D.G. Nest, T.-Y. Chung, J.J. Vegh, D.B. Graves, University of California at Berkeley, S. Engelmann, F. Weilnboeck, R.L. Bruce, T.C. Lin, R. Phaneuf, G.S. Oehrlein, University of Maryland, College Park, B. Long, G. Willson, University of Texas, Austin, E.A. Hudson, Lam Research Corp., C. Andes, D. Wang, Rohm and Haas Electronic Materials
4:40pm PS-TuA10
Plasma Radiation Effects on Photoresist Degradation and Depth Fluorination of Photoresists in Fluorocarbon Discharges
F. Weilnboeck, S. Engelmann, R.L. Bruce, G.S. Oehrlein, University of Maryland, D.G. Nest, D.B. Graves, University of California, Berkeley, C. Andes, D. Wang, Rohm and Haas Electronic Materials, E.A. Hudson, Lam Research Corp.
5:00pm PS-TuA11
Ar Ion Sputtering of GaAs Studied by Molecular Dynamics Simulation and Laser Spectroscopy of Ga Atoms in the Gas Phase
E. Despiau-Pujo, P. Chabert, LPTP, CNRS - Ecole Polytechnique, France, R. Ramos, G. Cunge, N. Sadeghi, LTM, CNRS - UJF - INPG, France
5:20pm PS-TuA12
Modeling of InP Etching under High Density Plasma of Cl2/Ar
B. Liu, A. Rhallabi, J.P. Landesman, Institut des Materiaux Jean Rouxel, France, J.L. Leclercq, Institut des Nanotechnologies de Lyon, France