| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS2-WeM |
| Session: | Plasma Sources |
| Presenter: | Y. Kimura, Tokai University, Japan |
| Authors: | H. Shindo, Tokai University, Japan Y. Kimura, Tokai University, Japan |
| Correspondent: | Click to Email |
Long line-shaped plasmas are inevitable in material processing in manufacturing industries, such as flat panel displays (FPDs) and surface modification of large- area thin films. In this work, we studied a newly proposed method of large-scaled line plasma generation. In this method, microwave power of frequency of 2.45 GHz in a narrowed and flattened rectangular waveguide is employed to produce plasma. Since the width of waveguide is very close to the cutoff condition, the wavelength of microwave inside the guide is very much lengthened, providing a condition of long uniform line plasma generation. The narrowed rectangular waveguides of 1.5 and 2.0 m in length and 5mm in height were examined. The width of the waveguide could be varied from 59 to 61 mm. The waveguide has a long slot of 5 mm width on the top surface to launch the microwave into the discharge plasma chamber. The plasmas of Ar nad He at the pressures of 0.1 to 5Torr were generated by employing an extremely long microwave wavelength. It was observed that the microwave electric field became more uniform as the wave guide width was narrowed, indicating that the plasma production is due to the mechanism expected. The optical emission line measurements in Ar and He plasmas also confirmed that the uniform plasma was produced in the entire region of 1.5 m and 2.0 m. The probe measuremnts of the plasma were also made, indicating that the plasma uniformity was within 10 % in the entire plasma. Thus we conclude that the present method of plasma production is quite advantageous for large area processing. Plasma extraction was also successfully tested.