| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS1-ThA |
| Session: | Plasma Diagnostics, Sensors, and Control II |
| Presenter: | J.P. Booth, Lam Research Corporation |
| Authors: | J.P. Booth, Lam Research Corporation D. Keil, Lam Research Corporation C. Thorgrimsson, Lam Research Corporation M. Nagai, Lam Research Corporation J. Kim, Lam Research Corporation L. Albarade, Lam Research Corporation |
| Correspondent: | Click to Email |
We have implemented the deposition-tolerant ion flux probe described by Braithwaite et al.1 as an in-situ process monitoring sensor on a commercial dielectric etch tool. The probe head is integrated into the upper (grounded) electrode and is made of the same material, and has been shown to have negligible process impact. With the use of an embedded digital signal processor to analyze the current-voltage characteristics in real-time, this sensor delivers high-precision time-resolved measurements (at 10 Hz) of the ion flux, electron temperature and probe floating potential. In addition, if there are thin films deposited on the probe, the film thickness and conductivity can be determined. This gives unprecedented insight into the power delivery, gas composition and surface state of the reactor during wafer processing. This talk will explore how this information can be used to improve the yield, throughput and cost-of-ownership of production etch tools.
1 N. St.J. Braithwaite, J.P. Booth, and G. Cunge, Plasma Sources, Science and Technol., 5, 677, (1996).